参数资料
型号: NTMD4840NR2G
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CH DUAL 30V 4.5A 8-SOIC
产品变化通告: Wire Change 29/Aug/2008
标准包装: 1
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 6.9A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 9.5nC @ 10V
输入电容 (Ciss) @ Vds: 520pF @ 15V
功率 - 最大: 680mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
其它名称: NTMD4840NR2GOSDKR
NTMD4840N
TYPICAL PERFORMANCE CURVES
700
600
500
400
300
C iss
T J = 25 ° C
V GS = 0 V
10
9
8
7
6
5
4
V DS
Q GS
Q GD
QT
V GS
200
100
0
0
C rss
5 10
15
C oss
20
25
30
3
2
1
0
0
1
2
3
4
5
6
7
V GS = 10 V
I D = 6.9 A
T J = 25 ° C
8 9
10
100
DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2.5
Q G , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? To ? Source and
Drain ? To ? Source Voltage vs. Total Charge
V DD = 15 V
I D = 1 A
V GS = 10 V
t d(off)
2
V GS = 0 V
T J = 25 ° C
t f
1.5
10
t d(on)
t r
1
0.5
1
1
10
100
0
0.4
0.5
0.6
0.7
0.8
100
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
30
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
10 m s
25
I D = 7.5 A
10
100 m s
1 ms
20
1
0.1
V GS = 20 V
SINGLE PULSE
T C = 25 ° C
R DS(on) LIMIT
10 ms
dc
15
10
5
THERMAL LIMIT
0.01
0.01
PACKAGE LIMIT
0.1
1
10
100
0
25
50 75 100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
相关PDF资料
PDF描述
NTMD4884NFR2G MOSFET N-CH 30V 3.3A 8-SOIC
NTMD5836NLR2G MOSFET N-CH 40V 11A SO-8FL
NTMD5838NLR2G MOSFET N-CH 40V 8.9A 8SOIC
NTMD6N02R2 MOSFET PWR N-CH DL 3.92A 20V 8SO
NTMD6N03R2 MOSFET PWR N-CH DL 6A 30V 8SOIC
相关代理商/技术参数
参数描述
NTMD4884NF 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode
NTMD4884NFR2G 功能描述:MOSFET NFET FTKY S08 30V TR 5.6A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD4N03 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 4 A, 30 V, Na??Channel SOa??8 Dual
NTMD4N03R2 功能描述:MOSFET 30V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMD4N03R2G 功能描述:MOSFET 30V 4A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube