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| 型号： | NTMD5838NLR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 8.9A 8SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 17nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 785pF @ 20V |
| 功率 - 最大： | 2.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMD5838NL
Power MOSFET
40 V, 8.9 A, 20 m W , Dual N ? Channel SO ? 8
Features
? Low R DS(on)
? Low Capacitance
? Optimized Gate Charge
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
http://onsemi.com
R DS(ON) MAX
I D MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage
V GS
Value
40
± 20
Unit
V
V
40 V
20 m W @ 10 V
36.5 m W @ 4.5 V
N ? CHANNEL MOSFET
8.9 A
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
I D
P D
7.4
5.9
2.1
1.3
A
W
G
D
G
D
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
Pulsed Drain
Current
T A = 25 ° C
T A = 70 ° C
t ≤ 10 s
T A = 25 ° C
T A = 70 ° C
t p = 10 m s
I D
P D
I DM
8.9
7.1
3.0
1.9
35
A
W
A
S
S
MARKING DIAGRAM/
PIN ASSIGNMENT
D1 D1 D2 D2
8
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (L = 0.1 mH )
T J , T STG
I S
EAS
IAS
? 55 to
+150
7.0
20
21
° C
A
mJ
A
SO ? 8
CASE 751
STYLE 11
D5838N
AYWW
G
1
S1 G1 S2 G2
(Top View)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Value
Unit
ORDERING INFORMATION
Junction ? to ? Ambient Steady State
(Notes 1 & 3)
Junction ? to ? Ambient ? t ≤ 10 s (Note 1)
R q JA
R q JA
58
40
° C/W
Device
NTMD5838NLR2G
Package
SO ? 8
(Pb ? Free)
Shipping ?
2500/Tape & Reel
Junction ? to ? Ambient Steady State (Note 2) R q JA 106
1. Surface ? mounted on FR4 board using 1 sq ? in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface ? mounted on FR4 board using 0.155 in sq (100mm 2 ) pad size.
3. Both channels receive equivalent power dissipation
1 W applied on each channel: T J = 2 W * 58 ° C/W + 25 ° C = 141 ° C
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
February, 2012 ? Rev. 1
1
Publication Order Number:
NTMD5838NL/D
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