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| 型号： | NTMFS4108NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 22A 30V SO-8FL |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 毫欧 @ 21A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 54nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 6000pF @ 15V |
| 功率 - 最大： | 910mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMFS4108NT1GOSCT |
NTMFS4108N
Power MOSFET
30 V, 35 A, Single N ? Channel,
SO ? 8 Flat Lead Package
Features
? Thermally and Electrically Enhanced Packaging Compatible with
Standard SO ? 8 Package Footprint
? New Package Provides Capability of Inspection and Probe After
Board Mounting
? Ultra Low R DS(on) (at 4.5 V GS ), Low Gate Resistance and Low Q G
? Optimized for Low Side Synchronous Applications
? High Speed Switching Capability
? These are Pb ? Free Devices
V (BR)DSS
30 V
http://onsemi.com
http://onsemi.com
R DS(on) TYP
1.8 m W @ 10 V
2.7 m W @ 4.5 V
D
I D MAX
35 A
Applications
? Notebook Computer Vcore Applications
? Network Applications
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
S
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
$ 20
V
V
MARKING
DIAGRAM
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t v 10 s
Steady
State
t v 10 s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
22
16
35
2.7
7.2
A
W
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
D
4108N
AYWZZ
D
D
D
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
13.5
10
1.1
A
W
4108N
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
96.2
W
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J , T stg
288
? 55 to
150
A
° C
ORDERING INFORMATION
Device Package Shipping ?
Continuous Source Current (Body Diode) I S 6.0 A
Single Pulse Drain ? to ? Source Avalanche E AS 450 mJ
Energy (V DD = 30 V, V GS = 10 V, I PK = 30 A,
L = 1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 ″ sq. pad size
(Cu area = 650 mm 2 [1 oz] including traces).
2. Surface ? mounted on FR4 board using the minimum recommended pad size
(Cu area = 50 mm 2 ).
NTMFS4108NT1G SO ? 8 FL 1500 Tape / Reel
(Pb ? Free)
NTMFS4108NT3G SO ? 8 FL 5000 Tape / Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 7
1
Publication Order Number:
NTMFS4108N/D
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4108NT3G | 功能描述:MOSFET NFET SO8FL 40A 30V 1.8mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4119N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead |
| NTMFS4119NT1G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4119NT3G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4120N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead |
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