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| 型号： | NTMFS4108NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 22A 30V SO-8FL |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 13.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.2 毫欧 @ 21A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 54nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 6000pF @ 15V |
| 功率 - 最大： | 910mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMFS4108NT1GOSCT |
NTMFS4108N
THERMAL RESISTANCE RATINGS
Rating
Junction ? to ? Case (Drain Terminal)
Junction ? to ? Ambient ? Steady State (Note 3)
Junction ? to ? Ambient ? t v 10 s (Note 3)
Junction ? to ? Ambient ? Steady State (Note 4)
Symbol
R q JC
R q JA
R q JA
R q JA
Max
1.3
45.7
17.3
117
Unit
° C/W
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
21
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
25
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = 20 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
7.5
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 19 A
2.7
3.4
m W
V GS = 10 V, I D = 21 A
1.8
2.2
Forward Transconductance
g FS
V DS = 15 V, I D = 10 A
25
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
6000
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 15 V
1200
700
Total Gate Charge
Q G(TOT)
54
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 24 V, I D = 21 A
11
16
23
Gate Resistance
R G
0.7
W
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 6)
Turn ? On Delay Time
t d(ON)
45
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
60
70
140
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 6.0 A
T J = 25 ° C
T J = 125 ° C
0.72
0.65
1.1
V
Reverse Recovery Time
t RR
41
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 6.0 A
20
21
Reverse Recovery Charge
Q RR
45
nC
3.
4.
5.
6.
Surface ? mounted on FR4 board using 1 ″ sq. pad size (Cu area = 650 mm 2 [1 oz] including traces).
Surface ? mounted on FR4 board using the minimum recommended pad size (Cu area = 50 mm 2 ).
Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
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| NTMFS4108NT3G | 功能描述:MOSFET NFET SO8FL 40A 30V 1.8mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4119N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 30 A, Single N-Channel, SO-8 Flat Lead |
| NTMFS4119NT1G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4119NT3G | 功能描述:MOSFET NFET 32A 30V 2.7MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4120N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 31 A, Single N-Channel, SO-8 Flat Lead |
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