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| 型号： | NTMD4840NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 4.5A 8-SOIC |
| 产品变化通告： | Wire Change 29/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 6.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 520pF @ 15V |
| 功率 - 最大： | 680mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMD4840NR2GOSDKR |
NTMD4840N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)jk
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Tem-
perature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
18
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 100 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coeffi-
cient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
6.0
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 6.9 A
I D = 5.0 A
16
26
24
36
m W
Forward Transconductance
g FS
V DS = 1.5 V, I D = 6.9 A
15
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
520
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz, V DS = 15 V
V GS = 4.5 V, V DS = 15 V, I D = 6.9 A
V GS = 10 V, V DS = 15 V, I D = 6.9 A
140
70
4.8
1.1
2.1
1.9
9.5
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
7.6
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 15 V,
I D = 1.0 A, R G = 3.0 W
5.0
17
3.0
ns
DRAIN ? TO ? SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I D = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.76
0.58
1.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 2.0 A
12.5
7.3
5.2
6.0
ns
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.66
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.20
1.50
nH
nH
Gate Resistance
R G
2.0
3.0
W
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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