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| 型号： | NTMFS4120NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 18A 30V SO-8FL |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.5 毫欧 @ 26A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3600pF @ 24V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMFS4120NT1GOSCT |
NTMFS4120N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
21
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = 20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
7.4
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 26 A
3.5
4.5
m W
V GS = 4.5 V, I D = 24 A
4.2
5.5
Forward Transconductance
g FS
V DS = 15 V, I D = 26 A
35
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
3600
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 24 V
640
380
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = 4.5 V, V DS = 15 V, I D = 24 A
33
4.4
13
14
1.0
50
nC
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
24
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 1.0 A, R G = 3.0 W
32
27
31
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 6.0 A
T J = 25 ° C
T J = 125 ° C
0.74
0.6
1.0
V
Reverse Recovery Time
t RR
36
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 6.0 A
18
18
Reverse Recovery Charge
Q RR
34
nC
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4120NT3G | 功能描述:MOSFET 30V 31A Single N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4121N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 29 A, Single N-Channel, SO-8 Flat Lead |
| NTMFS4121NT1G | 功能描述:MOSFET NFET 24A 30V 4.0MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4121NT3G | 功能描述:MOSFET NFET 24A 30V 4.0MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4122N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 23 A, Single N-Channel, SO-8 Flat Lead |
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