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| 型号： | NTMFS5834NLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 13A SO-8FL |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1231pF @ 20V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 m W , Single N ? Channel
Features
? Low R DS(on)
? Low Capacitance
? Optimized Gate Charge
? NVMFS5834NLWF ? Wettable Flanks Product
? NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
40 V
http://onsemi.com
R DS(ON) MAX
9.3 m W @ 10 V
13.6 m W @ 4.5 V
D (5,6)
I D MAX
75 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
40
Unit
V
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
T A = 25 ° C
T A = 100 ° C
V GS
I D
± 20
14
12
V
A
G (4)
S (1,2,3)
Power Dissipation
R q JA (Note 1)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 100 ° C
T C = 25 ° C
T C = 100 ° C
P D
I D
3.6
2.5
75
63
W
A
N ? CHANNEL MOSFET
MARKING
DIAGRAM
D
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
T C = 25 ° C
T C = 100 ° C
t p = 10 m s
P D
I DM
107
75
276
W
A
1
DFN5
(SO ? 8FL)
CASE 488AA
STYLE 1
S
S
S
G
XXXXXX
AYWZZ
D
D
D
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche
Energy (L = 0.1 mH )
T J ,
T STG
I S
EAS
IAS
? 55 to
+175
75
48
31
° C
A
mJ
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Junction ? to ? Case (Bottom) (Note 1)
Junction ? to ? Case (Top) (Note 1)
Junction ? to ? Ambient Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
Symbol
R q JC
R q JC
R q JA
R q JA
Value
1.4
4.5
41
75
Unit
° C/W
1. Surface ? mounted on FR4 board using 1 sq ? in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface ? mounted on FR4 board using 0.155 in sq (100mm 2 ) pad size.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 5
1
Publication Order Number:
NTMFS5834NL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS5844NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 61 A, 12 m, Single N.Channel |
| NTMFS5844NLT1G | 功能描述:MOSFET 60V NCH T2 SO8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NT-MIL 1/2-0-SP | 功能描述:热收缩管和套管 HS-TUBING 1/2" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
| NT-MIL 1/4-0-SP | 功能描述:热收缩管和套管 HS-TUBING 1/4" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
| NT-MIL 3/4-0-SP | 功能描述:热收缩管和套管 HS-TUBING 3/4" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
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