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| 型号： | NTMFS5844NLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 60A SO-8FL |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1460pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS5844NL,
NVMFS5844NL
Power MOSFET
60 V, 61 A, 12 m W , Single N ? Channel
Features
? Small Footprint (5x6 mm) for Compact Design
? Low R DS(on) to Minimize Conduction Losses
? Low Q G and Capacitance to Minimize Driver Losses
? NVMFS5844NLWF ? Wettable Flanks Product
? NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol Value Unit
V (BR)DSS
60 V
http://onsemi.com
R DS(ON) MAX
12 m W @ 10 V
16 m W @ 4.5 V
D (5)
I D MAX
61 A
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
60
" 20
V
V
Continuous Drain Cur-
rent R Y J ? mb (Notes 1,
2, 3, 4)
Power Dissipation
R Y J ? mb (Notes 1, 2, 3)
Steady
State
T mb = 25 ° C
T mb = 100 ° C
T mb = 25 ° C
T mb = 100 ° C
I D
P D
61
43
107
54
A
W
G (4)
S (1,2,3)
N ? CHANNEL MOSFET
T A = 25 ° C
Power Dissipation
R q JA (Notes 1 & 3)
Continuous Drain Cur- T A = 25 ° C
rent R q JA (Notes 1, 3,
4) Steady T A = 100 ° C
State
T A = 100 ° C
Pulsed Drain Current T A = 25 ° C, t p = 10 m s
Current Limited by Package T A = 25 ° C
(Note 4)
Operating Junction and Storage Temperature
Source Current (Body Diode)
I D
P D
I DM
I DmaxPkg
T J , T stg
I S
11.2
8.0
3.7
1.8
247
80
? 55 to
175
60
A
W
A
A
° C
A
CASE 488AA G
STYLE 1 D
A = Assembly Location
Y = Year
1 S
DFN5 S XXXXXX
(SO ? 8FL) S AYWZZ
MARKING
DIAGRAM
D
D
D
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L(pk) = 31 A, L = 0.1 mH, R G = 25 W )
E AS
48
mJ
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Junction ? to ? Mounting Board (top) ? Steady
State (Notes 2, 3)
Junction ? to ? Ambient ? Steady State (Note 3)
Symbol
R Y J ? mb
R q JA
Value
1.4
41
Unit
° C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi ( Y ) is used as required per JESD51 ? 12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface ? mounted on FR4 board using a 650 mm 2 , 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
? Semiconductor Components Industries, LLC, 2013
May, 2013 ? Rev. 5
1
Publication Order Number:
NTMFS5844NL/D
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