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| 型号： | NTMS4177PR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 6.6A 8-SOIC |
| 产品变化通告： | Wire Change 12/May/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 11.4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3100pF @ 24V |
| 功率 - 最大： | 840mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4177P
Power MOSFET
-30 V, -11.4 A, P-Channel, SOIC-8
Features
?
?
?
?
?
Low R DS(on ) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
SOIC-8 Surface Mount Package Saves Board Space
This is a Pb-Free Device
V (BR)DSS
-30 V
http://onsemi.com
R DS(on) Max
12 m W @ -10 V
I D Max
-11.4 A
Applications
? Load Switches
? Notebook PC's
? Desktop PC's
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
19 m W @ -4.5 V
P-Channel
D
Rating
Drain-to-Source Voltage
Symbol
V DSS
Value
-30
Unit
V
Gate-to-Source Voltage
V GS
± 20
V
G
Continuous Drain
Current R q JA (Note 1)
Power Dissipation
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
-8.9
-7.1
1.52
A
W
S
R q JA (Note 1)
Continuous Drain
Current R q JA (Note 2)
Steady
T A = 25 ° C
T A = 70 ° C
I D
-6.6
-5.3
A
MARKING DIAGRAM
& PIN ASSIGNMENT
Power Dissipation
R q JA (Note 2)
State
T A = 25 ° C
P D
0.84
W
8
D D D D
Continuous Drain
Current R q JA t < 10 s
(Note 1)
Power Dissipation
R q JA t < 10 s (Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
-11.4
-9.3
2.5
A
W
8
1
SOIC-8
CASE 751
STYLE 12
1
4177P
AYWW
G
S S S G
Pulsed Drain Current
T A = 25 ° C,
t p = 10 m s
I DM
-46
A
4177P
A
Y
= Device Code
= Assembly Location
= Year
Operating Junction and Storage Temperature
T J , T STG
-55 to
° C
WW
= Work Week
+150
G
= Pb-Free Package
Source Current (Body Diode)
I S
-2.1
A
Single Pulse Drain-to-Source Avalanche
Energy T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 20 A pk , L = 1.0 mH, R G = 25 W
EAS
200
mJ
ORDERING INFORMATION
Device Package Shipping ?
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
NTMS4177PR2G
SOIC-8
(Pb-Free)
2500/Tape & Reel
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1
Publication Order Number:
NTMS4177P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4404 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTMS4404NR2 | 功能描述:MOSFET N-CH 30V 7A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTMS4503N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTMS4503NR2 | 功能描述:MOSFET 28V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4503NR2G | 功能描述:MOSFET 28V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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