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| 型号： | NTMS4177PR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 6.6A 8-SOIC |
| 产品变化通告： | Wire Change 12/May/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 11.4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 29nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3100pF @ 24V |
| 功率 - 最大： | 840mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4177P
THERMAL RESISTANCE RATINGS
Rating
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 10 s (Note 3)
Junction-to-FOOT (Drain)
Junction-to-Ambient – Steady State (Note 4)
Symbol
R q JA
R q JA
R q JF
R q JA
Max
82
50
20
148
Unit
° C/W
3. Surface-mounted on FR4 board using 1 inch sq pad size, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)jk
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage Tem‐
perature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = -250 m A
-30
29
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = -24 V
T J = 25 ° C
T J = 85 ° C
-1.0
-5.0
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coeffi‐
cient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = -250 m A
-1.5
6.0
-2.5
V
mV/ ° C
Drain-to-Source On Resistance
Forward Transconductance
R DS(on)
g FS
V GS = -10 V
V GS = -4.5 V
V DS = -1.5 V
I D = -11.4 A
I D = -9.1 A
I D = -11.4 A
10
15
30
12
19
m W
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz,
V DS = -24 V
V GS = -4.5 V, V DS = -15 V,
I D = -11.4 A
V GS = -10 V, V DS = -15 V,
I D = -11.4 A,
3100
550
370
29
3.3
10
13
55
pF
nC
nC
Gate Resistance
R G
2.0
4.0
W
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t d(ON)
18
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -10 V, V DD = -15 V,
I D = -1.0 A, R G = 6.0 W
13
64
36
ns
DRAIN-TO-SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
T J = 25 ° C
-0.73
-1.0
V
I D = -2.1 A
T J = 125 ° C
0.54
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = -2.1 A
34
18
16
30
ns
nC
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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