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| 型号： | NTMS4800NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 4.9A 8-SOIC |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 940pF @ 25V |
| 功率 - 最大： | 750mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4800N
Power MOSFET
30 V, 8 A, N ? Channel, SOIC ? 8
Features
?
?
?
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
SOIC ? 8 Surface Mount Package Saves Board Space
This is a Pb ? Free Device
V (BR)DSS
http://onsemi.com
R DS(ON) MAX
I D MAX
Applications
? DC ? DC Converters
? Printers
30 V
20 m W @ 10 V
27 m W @ 4.5 V
8A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Value
Unit
N ? Channel
D
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
Continuous Drain
Current R q JA (Note 1)
Power Dissipation R q JA
(Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
6.4
5.1
1.29
A
W
G
S
T A = 25 ° C
Continuous Drain
Current R q JA (Note 2)
Power Dissipation R q JA
(Note 2)
Continuous Drain
Current R q JA , t < 10 s
(Note 1)
Power Dissipation
R q JA , t < 10 s (Note 1)
Pulsed Drain Current
T A = 25 ° C
Steady T A = 70 ° C
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 25 ° C, t p = 10 m s
I D
P D
I D
P D
I DM
4.9
3.9
0.75
8.0
6.4
2.0
32
A
W
A
W
A
1
SO ? 8
CASE 751
STYLE 12
4800N
A
Y
MARKING DIAGRAM/
PIN ASSIGNMENT
1 8
Source Drain
Source Drain
Source Drain
Gate Drain
Top View
= Device Code
= Assembly Location
= Year
Operating Junction and Storage Temperature
T J ,
T stg
? 55 to
+150
° C
WW
G
= Work Week
= Pb ? Free Package
Source Current (Body Diode)
I S
2.0
A
(Note: Microdot may be in either location)
Single Pulse Drain ? to ? Source Avalanche Energy E AS
(T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 11 A pk , L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes T L
(1/8 ″ from case for t = 10 s)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Ambient – Steady State (Note 1) R q JA
Junction ? to ? Ambient – t < 10 s (Note 1) R q JA
Junction ? to ? Foot (Drain)
R q JF
Junction ? to ? Ambient – Steady State (Note 2)
R q JA
60.5
260
Value
97
62.5
25
167
mJ
° C
Unit
° C/W
ORDERING INFORMATION
Device Package Shipping ?
NTMS4800NR2G SOIC ? 8 2500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad, 1 oz Cu
2. Surface ? mounted on FR4 board using the minimum recommended pad size
? Semiconductor Components Industries, LLC, 2009
August, 2009 ? Rev. 1
1
Publication Order Number:
NTMS4800N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTMS4801NR2G | MOSFET N-CH 30V 7.5A 8-SOIC |
| NTMS4802NR2G | MOSFET N-CH 30V 11.1A 8-SOIC |
| NTMS4807NR2G | MOSFET N-CH 30V 9.1A 8-SOIC |
| NTMS4816NR2G | MOSFET N-CH 30V 6.8A 8-SOIC |
| NTMS4840NR2G | MOSFET N-CH 30V 4.5A 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4801N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 12 A, N−Channel, SO−8 |
| NTMS4801NR2G | 功能描述:MOSFET NFET SO8 30V 9.9A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4802N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 18 A, N−Channel, SO−8 |
| NTMS4802NR2G | 功能描述:MOSFET 30V 13.6A N-CH 0.009OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4807N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 14.8 A, N-Channel, SO-8 |
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