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| 型号： | NTMS4807NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.1A 8-SOIC |
| 产品变化通告： | Wire Change 29/Aug/2008 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.1 毫欧 @ 14.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2900pF @ 24V |
| 功率 - 最大： | 860mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMS4807N
Power MOSFET
30 V, 14.8 A, N-Channel, SO-8
Features
?
?
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
This is a Pb-Free Device
http://onsemi.com
Applications
? Disk Drives
? DC-DC Converters
? Printers
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
R DS(ON) MAX
6.1 m W @ 10 V
7.5 m W @ 4.5 V
N-Channel
I D MAX
14.8 A
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
D
Continuous Drain
Current R q JA (Note 1)
Power Dissipation R q JA
(Note 1)
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
12.2
9.8
1.55
A
W
G
S
Continuous Drain
Current R q JA (Note 2)
Power Dissipation R q JA
(Note 2)
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
9.1
7.3
0.86
A
W
1
MARKING DIAGRAM/
PIN ASSIGNMENT
1 8
Source Drain
Continuous Drain
Current R q JA , t v 10 s
(Note 1)
T A = 25 ° C
T A = 70 ° C
I D
14.8
11.8
A
SO-8
CASE 751
STYLE 12
Source
Source
Gate
Drain
Drain
Drain
Power Dissipation
R q JA , t v 10 s(Note 1)
Pulsed Drain Current
T A = 25 ° C
T A = 25 ° C, t p = 10 m s
P D
I DM
2.3
50
W
A
Top View
4807N = Device Code
A = Assembly Location
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy
(T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 14 A pk , L = 1.0 mH, R G = 25 W )
T J ,
T stg
I S
E AS
-55 to
150
2.9
98
° C
A
mJ
Y = Year
WW = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
Device
NTMS4807NR2G
Package
SO-8
Shipping ?
2500/Tape & Reel
THERMAL RESISTANCE MAXIMUM RATINGS
(Pb-Free)
Parameter
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t v 10 s (Note 1)
Junction-to-Foot (Drain)
Junction-to-Ambient – Steady State (Note 2)
Symbol
R q JA
R q JA
R q JF
R q JA
Value
80.5
54.9
19.5
145
Unit
° C/W
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NTMS4807N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4816N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11 A, N-Channel, SO-8 |
| NTMS4816NR2G | 功能描述:MOSFET NFET SO8 30V 11A NCH 0.030R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4840N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8 |
| NTMS4840NR2G | 功能描述:MOSFET NFET SO8 30V 30A 24MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4872N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.2 A, N−Channel, SO−8 |
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