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| 型号： | NTMS4503NR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 28V 9A 8-SOIC |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 28V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 14A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 16V |
| 功率 - 最大： | 930mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMS4503NR2OSCT |
NTMS4503N
Power MOSFET
28 V, 14 A, N?Channel, SOIC?8
Features
? Low R DS(on)
? High Power and Current Handling Capability
? Low Gate Charge
? Pb?Free Package is Available
Applications
? DC/DC Converters
? Motor Drives
? Synchronous Rectifier ? POL
? Buck Low?Side
V (BR)DSS
28 V
http://onsemi.com
R DS(on) Typ
7.0 m W @ 10 V
8.8 m W @ 4.5 V
D
I D Max
(Note 1)
14 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Gate?to?Source Voltage ? Continuous
Drain Current
Continuous @ T A = 25 ° C (Note 1)
Continuous @ T A = 25 ° C (Note 2)
Continuous @ T A = 25 ° C (Note 3)
Single Pulse (tp = 10 m s)
Symbol
V DSS
V GS
I D
I DM
Value
28
$ 20
14
12
9.0
40
Unit
V
V
A
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D D D D
Total Power Dissipation
T A = 25 ° C (Note 1)
T A = 25 ° C (Note 2)
T A = 25 ° C (Note 3)
Operating and Storage Temperature
P D
T J , T stg
2.5
1.66
0.93
?55 to
150
W
° C
8
1
SOIC?8
CASE 751
STYLE 12
8
1
4503N
AYWW G
G
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 30 V, V GS = 10 V, I L = 12.2 A,
L = 1.0 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
T L
75
260
mJ
° C
4503N
A
Y
WW
G
S S S G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
THERMAL RESISTANCE RATINGS
(Note: Microdot may be in either location)
Rating
Symbol
Value
Unit
Thermal Resistance
Junction?to?Ambient (Note 1)
Junction?to?Ambient (Note 2)
R q JA
50
75
° C/W
ORDERING INFORMATION
Device Package Shipping ?
Junction?to?Ambient (Note 3)
135
NTMS4503NR2
SOIC?8
2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
NTMS4503NR2G
SOIC?8
(Pb?Free)
2500/Tape & Reel
Recommended Operating Conditions may affect device reliability.
1. Surface?mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq), t < 10 s.
2. Surface?mounted on FR4 board using 1 ″ pad size
(Cu area 1.127 in sq) steady state.
3. Surface?mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in sq), steady state.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 2
1
Publication Order Number:
NTMS4503N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4503NR2G | 功能描述:MOSFET 28V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4503NSR2G | 制造商:ON Semiconductor 功能描述:NFET SO8 28V 14A 7MOHM - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET S08 28V 14A 7MOHM |
| NTMS4700NR2 | 功能描述:MOSFET 30V 14.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4700NR2G | 功能描述:MOSFET 30V 14.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4704N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 12.3 A, Single N−Channel, SO−8 |
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