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| 型号： | NTMS10P02R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 8.8A 8-SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 10A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3640pF @ 16V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMS10P02R2OSCT |
NTMS10P02R2
Power MOSFET
?10 Amps, ?20 Volts
P ? Channel Enhancement ? Mode
Single SOIC ? 8 Package
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Miniature SOIC ? 8 Surface Mount Package
? Diode Exhibits High Speed, Soft Recovery
? Avalanche Energy Specified
? SOIC ? 8 Mounting Information Provided
? Pb ? Free Package is Available
Applications
? Power Management in Portable and Battery ? Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS
http://onsemi.com
? 10 AMPERES
? 20 VOLTS
14 m W @ V GS = ? 4.5 V
P ? Channel
D
G
S
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 20
Unit
Vdc
MARKING DIAGRAM &
PIN ASSIGNMENT
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance ?
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3)
V GS
R q JA
P D
I D
I D
P D
I D
I DM
" 12
50
2.5
? 10
? 8.0
0.6
? 5.5
? 50
Vdc
° C/W
W
A
A
W
A
A
8
1
SOIC ? 8
CASE 751
STYLE 12
8
1
D
S
D D D
E10P02
AYWW G
G
S S G
Thermal Resistance ?
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Continuous Drain Current @ 25 ° C
Continuous Drain Current @ 70 ° C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 3)
Operating and Storage Temperature Range
R q JA
P D
I D
I D
P D
I D
I DM
T J , T stg
80
1.6
? 8.8
? 6.4
0.4
? 4.5
? 44
? 55 to
+150
° C/W
W
A
A
W
A
A
° C
E10P02 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Single Pulse Drain ? to ? Source Avalanche En-
ergy ? Starting T J = 25 ° C
(V DD = ? 20 Vdc, V GS = ? 4.5 Vdc,
Peak I L = 5.0 Apk, L = 40 mH, R G = 25 W )
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
E AS
T L
500
260
mJ
° C
Device
NTMS10P02R2
NTMS10P02R2G
Package
SOIC ? 8
SOIC ? 8
(Pb ? Free)
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2 ″ square FR ? 4 Board
(1 in sq, Cu 0.06 ″ thick single sided), t = 10 seconds.
2. Mounted onto a 2 ″ square FR ? 4 Board
(1 in sq, Cu 0.06 ″ thick single sided), t = steady state.
3. Pulse Test: Pulse Width < 300 m s, Duty Cycle < 2%.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 3
1
Publication Order Number:
NTMS10P02R2/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS10P02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:HDTMOS3e Single SO-8 |
| NTMS10P02R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode |
| NTMS10P02R2G | 功能描述:MOSFET 20V 10A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS3P03R2 | 功能描述:MOSFET 30V 3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS3P03R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -3.05 Amps, -30 Volts |
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