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| 型号： | NTMS10P02R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 8.8A 8-SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 14 毫欧 @ 10A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3640pF @ 16V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTMS10P02R2OSCT |
NTMS10P02R2
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted) (N ote 4)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = ? 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ? 20 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = ? 20 Vdc, V GS = 0 Vdc, T J = 70 ° C)
Gate ? Body Leakage Current
(V GS = ? 12 Vdc, V DS = 0 Vdc)
Gate ? Body Leakage Current
(V GS = +12 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
I GSS
? 20
?
?
?
?
?
?
? 12.1
?
?
?
?
?
?
? 1.0
? 5.0
? 100
100
Vdc
mV/ ° C
m Adc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = ? 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? State Resistance
(V GS = ? 4.5 Vdc, I D = ? 10 Adc)
(V GS = ? 2.5 Vdc, I D = ? 8.8 Adc)
Forward Transconductance (V DS = ? 10 Vdc, I D = ? 10 Adc)
V GS(th)
R DS(on)
g FS
? 0.6
?
?
?
?
? 0.88
2.8
0.012
0.017
30
? 1.20
?
0.014
0.020
?
Vdc
mV/ ° C
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = ? 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
3100
1100
475
3640
1670
1010
pF
SWITCHING CHARACTERISTICS (Notes 5 & 6)
Turn ? On Delay Time
t d(on)
?
25
35
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = ? 10 Vdc, I D = ? 1.0 Adc,
V GS = ? 4.5 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
?
?
?
40
110
110
65
190
190
Turn ? On Delay Time
t d(on)
?
25
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = ? 10 Vdc, I D = ? 10 Adc,
V GS = ? 4.5 Vdc,
R G = 6.0 W )
t r
t d(off)
t f
?
?
?
100
100
125
?
?
?
Total Gate Charge
Gate ? Source Charge
Gate ? Drain Charge
(V DS = ? 10 Vdc,
V GS = ? 4.5 Vdc,
I D = ? 10 Adc)
Q tot
Q gs
Q gd
?
?
?
48
6.5
17
70
?
?
nC
BODY ? DRAIN DIODE RATINGS (Note 5)
Diode Forward On ? Voltage
Diode Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = ? 2.1 Adc, V GS = 0 Vdc)
(I S = ? 2.1 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = ? 10 Adc, V GS = 0 Vdc)
(I S = ? 10 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = ? 2.1 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
?
?
? 0.72
? 0.60
? 0.90
? 0.75
65
25
40
0.075
? 1.2
?
?
?
100
?
?
?
Vdc
Vdc
ns
m C
4. Handling precautions to protect against electrostatic discharge is mandatory.
5. Indicates Pulse Test: Pulse Width = 300 m s max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS10P02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:HDTMOS3e Single SO-8 |
| NTMS10P02R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −10 Amps, −20 Volts P−Channel Enhancement−Mode |
| NTMS10P02R2G | 功能描述:MOSFET 20V 10A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS3P03R2 | 功能描述:MOSFET 30V 3.05A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS3P03R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -3.05 Amps, -30 Volts |
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