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| 型号： | NTMFS5834NLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 13A SO-8FL |
| 标准包装： | 1,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1231pF @ 20V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS5834NL, NVMFS5834NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
40
34.7
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 125 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.7
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 20 A
I D = 20 A
7.1
11.3
9.3
13.6
m W
Forward Transconductance
g FS
V DS = 5 V, I D = 20 A
29
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C ISS
1231
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Plateau Voltage
Gate Resistance
C OSS
C RSS
Q G(TOT)
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GP
R G
V GS = 0 V, f = 1 MHz, V DS = 20 V
V GS = 10 V, V DS = 20 V; I D = 20 A
V GS = 4.5 V, V DS = 20 V; I D = 20 A
198
141
24
12
1.0
4.2
6.3
3.4
0.7
pF
nC
V
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
10
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 20 V,
I D = 20 A, R G = 2.5 W
56.4
17.4
6.6
ns
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 20 A
T J = 25 ° C
T J = 125 ° C
0.84
0.72
1.2
V
Reverse Recovery Time
t RR
18
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dIS/dt = 100 A/ m s,
I S = 20 A
10
8.0
108
ns
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS5844NL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 60 V, 61 A, 12 m, Single N.Channel |
| NTMFS5844NLT1G | 功能描述:MOSFET 60V NCH T2 SO8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NT-MIL 1/2-0-SP | 功能描述:热收缩管和套管 HS-TUBING 1/2" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
| NT-MIL 1/4-0-SP | 功能描述:热收缩管和套管 HS-TUBING 1/4" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
| NT-MIL 3/4-0-SP | 功能描述:热收缩管和套管 HS-TUBING 3/4" BK PRICE PER FT RoHS:否 制造商:3M Electronic Specialty 类型:Tubing 材料:Polyolefin, Flexible 颜色:Clear 最低收缩温度:+ 100 C 恢复直径: 长度:100 ft 内径:1.5 in 收缩率:2:1 |
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