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| 型号： | NTP45N06LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 45A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 45A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 22.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP45N06LGOS |
NTP45N06L, NTB45N06L
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
60
?
67
67.2
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current (V GS = ± 15 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.8
4.7
2.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 4)
R DS(on)
m W
(V GS = 5.0 Vdc, I D = 22.5 Adc)
Static Drain?to?Source On?Voltage (Note 4)
(V GS = 5.0 Vdc, I D = 45 Adc)
(V GS = 5.0 Vdc, I D = 22.5 Adc, T J = 150 ° C)
V DS(on)
?
?
?
23
1.03
0.93
28
1.51
?
Vdc
Forward Transconductance (Note 4) (V DS = 8.0 Vdc, I D = 12 Adc)
g FS
?
22.8
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1212
1700
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
352
90
480
180
SWITCHING CHARACTERISTICS (Note 5)
Turn?On Delay Time
t d(on)
?
13
30
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 45 Adc,
V GS = 5.0 Vdc, R G = 9.1 W ) (Note 4)
t r
t d(off)
t f
?
?
?
341
36
158
680
75
320
Gate Charge
(V DS = 48 Vdc, I D = 45 Adc,
V GS = 5.0 Vdc) (Note 4)
Q T
Q 1
Q 2
?
?
?
23
4.6
14.1
32
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
(I S = 45 Adc, V GS = 0 Vdc) (Note 4)
(I S = 45 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 45 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 4)
V SD
t rr
t a
?
?
?
?
1.01
0.92
56
30
1.15
?
?
?
Vdc
ns
t b
?
26
?
Reverse Recovery Stored Charge
Q RR
?
0.09
?
m C
3. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
in 2 ).
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