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参数资料
| 型号： | NTP45N06LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 45A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 45A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 22.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP45N06LGOS |
NTP45N06L, NTB45N06L
PACKAGE DIMENSIONS
TO?220
CASE 221A?09
ISSUE AA
H
Q
Z
L
V
G
B
4
1 2 3
N
D
A
K
F
T
U
S
R
J
C
?T?
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ??? 1.15 ???
Z ??? 0.080 ??? 2.04
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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8
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NTP45N06L/D
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