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参数资料
| 型号： | NTP45N06LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 45A TO220AB |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 产品目录绘图： | MOSFET TO-220, TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 45A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 22.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 32nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1700pF @ 25V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP45N06LGOS |
NTP45N06L, NTB45N06L
80
70
60
50
V GS = 10 V
V GS = 5.5 V
V GS = 5 V
V GS = 6 V
V GS = 4.5 V
V GS = 7 V
80
70
60
50
V DS > = 10 V
40
40
30
V GS = 8 V
V GS = 4 V
30
T J = 25 ° C
20
20
10
V GS = 9 V
V GS = 3.5 V
10
T J = 100 ° C
T J = ?55 ° C
0
0
1
2
3
4
0
1.8
2.6
3.4
4.2
5
5.8
0.046
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
V GS = 5 V
0.046
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.042
0.038
0.034
T J = 100 ° C
0.042
0.038
0.03
T J = 25 ° C
0.034
V GS = 5 V
0.03
0.026
0.022
0.018
T J = ?55 ° C
0.026
0.022
V GS = 10 V
0.014
0
10
20
30
40
50
60
70
80
0.018
0
10
20
30
40
50
60
70
80
I D , DRAIN CURRENT (AMPS)
Figure 3. On?Resistance vs. Gate?to?Source
Voltage
I D , DRAIN CURRENT (AMPS)
Figure 4. On?Resistance vs. Drain Current and
Gate Voltage
2
1.8
I D = 22.5 A
V GS = 5 V
10000
V GS = 0 V
T J = 150 ° C
1.6
1.4
1000
T J = 125 ° C
1.2
100
1
0.8
0.6
10
T J = 100 ° C
?50 ?25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Drain?to?Source Leakage Current
vs. Voltage
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