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| 型号： | NTR0202PLT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 400MA SOT-23 |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 400mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 800 毫欧 @ 200mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 70pF @ 5V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
| 其它名称： | NTR0202PLT1OS |
NTR0202PL, NVTR0202PL
Power MOSFET
? 20 V, ? 400 mA, P ? Channel
SOT ? 23 Package
Features
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
R DSon = 0.80 W , V GS = ? 10 V
R DSon = 1.10 W , V GS = ? 4.5 V
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? AEC ? Q101 Qualified and PPAP Capable ? NVTR0202PL
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? DC ? DC Converters
? Computers
? Printers
? PCMCIA Cards
? Cellular and Cordless Telephones
V (BR)DSS
? 20 V
http://onsemi.com
R DS(on) Typ
550 m W @ ? 10 V
P ? Channel
D
G
S
I D MAX
? 400 mA
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Drain ? to ? Source Voltage V DSS
Value
? 20
Unit
V
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
Gate ? to ? Source Voltage ? Continuous
Continuous Drain Current @ T A = 25 ° C
Pulsed Drain Current (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C (Note 1)
V GS
I D
I DM
P D
$ 20
? 0.4
? 1.0
225
V
A
mW
SOT ? 23
CASE 318
STYLE 21
1
Gate
PL M G
G
2
Source
Operating and Storage Temperature Range
Thermal Resistance ? Junction ? to ? Ambient
Source Current (Body Diode)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 s
T J , T stg
R q JA
I S
T L
? 55 to
150
556
0.4
260
° C
° C/W
A
° C
PL = Specific Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
ORDERING INFORMATION
Device Package Shipping ?
NTR0202PLT1G SOT ? 23 3000 / Tape &
(Pb ? Free) Reel
NTR0202PLT3G
NVTR0202PLT1G
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
10000 / Tape &
Reel
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 5
1
Publication Order Number:
NTR0202PL/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR0202PLT1G | 功能描述:MOSFET -20V -400mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR0202PLT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 20 V 550 mOhm 225 mW Surface Mount Power MOSFET - SOT-23 |
| NTR0202PLT3 | 功能描述:MOSFET -20V -400mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR0202PLT3G | 功能描述:MOSFET -20V -400mA P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR02D1000CTRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
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