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参数资料
| 型号： | NTR3161NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.3A SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 24/Jan/2011 Product Obsolescence 01/Jul/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 10V |
| 功率 - 最大： | 820mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR3161N
Power MOSFET
20 V, 3.3 A, Single N ? Channel, SOT ? 23
Features
? Low R DS(on)
? Low Gate Charge
? Low Threshold Voltage
? Halide ? Free
? This is a Pb ? Free Device
V (BR)DSS
http://onsemi.com
R DS(on) MAX
50 m W @ 4.5 V
I D MAX
3.3 A
Applications
? DC ? DC Conversion
? Battery Management
? Load/Power Switch
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
20 V 63 m W @ 2.5 V 3.0 A
87 m W @ 1.8 V 2.5 A
SIMPLIFIED SCHEMATIC ? N ? CHANNEL
D
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
20
Unit
V
Gate ? to ? Source Voltage
V GS
± 8
V
G
Continuous Drain
Current (Note 1)
t ≤ 30 s
T A = 25 ° C
T A = 85 ° C
I D
3.3
2.3
A
S
t ≤ 10 s
T A = 25 ° C
4.0
T A = 25 ° C
Power Dissipation Steady
(Note 1) State
t ≤ 10 s
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
P D
I DM
T J ,
T stg
0.82
1.25
6.4
? 55 to
150
W
A
° C
1
2
SOT ? 23
3
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
TRCM G
G
T L
° C
Source Current (Body Diode) I S 0.65 A
Lead Temperature for Soldering Purposes 260
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
CASE 318 1
STYLE 21 1 2
Gate Source
TRC = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Parameter
Junction ? to ? Ambient ? Steady State (Note 1)
Symbol
R q JA
Max
260
Unit
° C/W
ORDERING INFORMATION
Junction ? to ? Ambient ? t ≤ 30 s
R q JA
153
° C/W
Device
Package
Shipping ?
Junction ? to ? Ambient ? t < 10 s (Note 1) R q JA 100 ° C/W
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
NTR3161NT1G SOT ? 23 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
June, 2008 ? Rev. 0
1
Publication Order Number:
NTR3161N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR3162P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −3.6 A, Single P−Channel, SOT−23 |
| NTR3162PT1G | 功能描述:MOSFET PFET SOT23 20V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR3162PT3G | 功能描述:MOSFET PFET SOT23 20V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR3A30PZ | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??2.9 A, Single Pa??Channel 2.4 x 2.9 x 1.0 mm SOTa??23 Package |
| NTR3A30PZT1G | 制造商:ON Semiconductor 功能描述:PFET SOT23 20V 2.9A 38MOH - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PFET SOT23 20V 2.9A 38MOH |
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