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| 型号： | NTR3161NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.3A SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 24/Jan/2011 Product Obsolescence 01/Jul/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 10V |
| 功率 - 最大： | 820mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR3161N
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V (BR)DSS
/T J
I DSS
I GSS
V GS = 0 V, I D = 250 m A
I D = 250 m A, Reference to 25 ° C
V GS = 0 V, V DS = 16 V, T J = 25 ° C
V GS = 0 V, V DS = 16 V, T J = 125 ° C
V DS = 0 V, V GS = " 8 V
20
16.2
1.0
10
100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.4
0.6
1.0
V
Negative Threshold Temperature
Coefficient
V GS(TH)
/T J
2.4
mV/ ° C
Drain ? to ? Source On ? Resistance
R DS(on)
V GS = 4.5 V, I D = 3.3 A
38
50
m W
V GS = 2.5 V, I D = 3.0 A
V GS = 1.8 V, I D = 2.5 A
44
52
63
87
Forward Transconductance
g FS
V DS = 5.0 V, I D = 3.3 A
10.5
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
540
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
80
62
Total Gate Charge
Q G(TOT)
7.3
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V,
I D = 3.3 A
0.4
0.8
1.6
Gate Resistance
R G
2.4
W
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
6.7
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DD = 10 V,
I D = 3.3 A, R G = 6 W
11.6
18.6
23.2
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = 1.0 A, T J = 25 ° C
V GS = 0 V, I S = 1.0 A,
dI SD /d t = 100 A/ m s
0.65
14.7
5.2
9.5
3.3
1.0
V
ns
nC
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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