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| 型号： | NTR4003NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 500MA SOT-23 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.15nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 21pF @ 5V |
| 功率 - 最大： | 690mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTR4003NT1GOSDKR |
NTR4003N, NVR4003N
Small Signal MOSFET
30 V, 0.56 A, Single N ? Channel, SOT ? 23
Features
? Low Gate Voltage Threshold (V GS(TH) ) to Facilitate Drive Circuit
Design
? Low Gate Charge for Fast Switching
? ESD Protected Gate
? SOT ? 23 Package Provides Excellent Thermal Performance
? Minimum Breakdown Voltage Rating of 30 V
? NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Notebooks:
? Level Shifters
? Logic Switches
? Low Side Load Switches
? Portable Applications
V (BR)DSS
30 V
1
http://onsemi.com
R DS(on) TYP
1.0 W @ 4.0 V
1.5 W @ 2.5 V
N ? Channel
3
I D MAX
0.56 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
2
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
MARKING DIAGRAM/
PIN ASSIGNMENT
T A = 85 ° C
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady T A = 25 ° C
State
Steady State
t < 10 s T A = 25 ° C
T A = 85 ° C
t<5s
I D
P D
I D
P D
0.5
0.37
0.69
0.56
0.40
0.83
A
W
A
W
1
2
SOT ? 23
CASE 318
STYLE 21
3
3
Drain
TR8 M G
G
1 2
Gate Source
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I DM
T J ,
Tstg
I S
T L
1.7
? 55 to
150
1.0
260
A
° C
A
° C
TR8 = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction ? to ? Ambient ? Steady State (Note 1) R q JA 180 ° C/W
Junction ? to ? Ambient ? t < 10 s (Note 1) R q JA 150
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 300
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
Device Package Shipping ?
NTR4003NT1G SOT ? 23 3000 / Tape & Reel
(Pb ? Free)
NTR4003NT3G SOT ? 23 10,000 / Tape &
(Pb ? Free) Reel
NVR4003NT3G SOT ? 23 10,000 / Tape &
(Pb ? Free) Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
June, 2012 ? Rev. 3
1
Publication Order Number:
NTR4003N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTR4101PT1G | MOSFET P-CH 20V 1.8A SOT-23 |
| NTR4170NT3G | MOSFET N-CH 30V 3.2A SGL SOT23-3 |
| NTR4171PT3G | MOSFET P-CH 30V 2.2A SOT23-3 |
| NTR4501NT1 | MOSFET N-CHAN 3.2A 20V SOT-23 |
| NTR4502PT1G | MOSFET P-CH 30V 1.13A SOT-23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR4003NT3G | 功能描述:MOSFET NFET 30V .56A 1500M RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4003NT3G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 30V 560mA SOT-23 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 30V, 560mA SOT-23 |
| NTR4101P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| NTR4101P_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| NTR4101PT1 | 功能描述:MOSFET -20V -3.2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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