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参数资料
| 型号： | NTR4003NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 500MA SOT-23 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 500mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.5 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.15nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 21pF @ 5V |
| 功率 - 最大： | 690mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTR4003NT1GOSDKR |
NTR4003N, NVR4003N
PACKAGE DIMENSIONS
3
D
SEE VIEW C
SOT ? 23 (TO ? 236)
CASE 318 ? 08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E
A
A1
1
e
2
b
H E
L
L1
VIEW C
q
c
0.25
MILLIMETERS
DIM MIN NOM MAX
A 0.89 1.00 1.11
A1 0.01 0.06 0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80 2.90 3.04
E 1.20 1.30 1.40
e 1.78 1.90 2.04
L 0.10 0.20 0.30
L1 0.35 0.54 0.69
H E 2.10 2.40 2.64
q 0 ° ??? 10 °
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0 °
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
???
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 °
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
SCALE 10:1
mm
inches
0.031
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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NTR4003N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR4003NT3G | 功能描述:MOSFET NFET 30V .56A 1500M RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4003NT3G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 30V 560mA SOT-23 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 30V, 560mA SOT-23 |
| NTR4101P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| NTR4101P_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Trench Power MOSFET −20 V, Single P−Channel, SOT−23 |
| NTR4101PT1 | 功能描述:MOSFET -20V -3.2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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