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参数资料
| 型号： | NTR4501NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.2A SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 05/Oct/2010 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 3.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 200pF @ 10V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR4501N, NVR4501N
Power MOSFET
20 V, 3.2 A, Single N ? Channel, SOT ? 23
Features
? Leading Planar Technology for Low Gate Charge / Fast Switching
? 2.5 V Rated for Low Voltage Gate Drive
? SOT ? 23 Surface Mount for Small Footprint
? NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Load/Power Switch for Portables
? Load/Power Switch for Computing
? DC ? DC Conversion
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
20 V
http://onsemi.com
R DS(on) Typ
70 m W @ 4.5 V
88 m W @ 2.5 V
N ? Channel
D
G
I D Max
(Note 1)
3.6 A
3.1 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
20
Unit
V
S
Gate ? to ? Source Voltage
Continuous Drain Steady T A = 25 ° C
Current (Note 1) State
T A = 85 ° C
Steady State Power Steady State
Dissipation (Note 1)
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
V GS
I D
P D
I DM
T J ,
T stg
I S
± 12
3.2
2.4
1.25
10.0
? 55 to
150
1.6
V
A
A
W
A
° C
A
1
3
2
SOT ? 23
CASE 318
STYLE 21
TR1
M
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
TR1 M G
G
1 2
Gate Source
= Device Code
= Date Code*
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
G = Pb ? Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Parameter
Symbol
Max
Unit
Junction ? to ? Ambient (Note 1)
R q JA
100
° C/W
ORDERING INFORMATION
Junction ? to ? Ambient (Note 2)
R q JA
300
Device
Package
Shipping ?
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
NTR4501NT1G
NVR4501NT1G
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
3000 / Tape & Reel
3000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
November, 2012 ? Rev. 13
1
Publication Order Number:
NTR4501N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR4501NT3H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTR4502P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23 |
| NTR4502PT1 | 功能描述:MOSFET -30V -1.95A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4502PT1G | 功能描述:MOSFET -30V -1.95A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR4502PT3 | 功能描述:MOSFET -30V -1.95A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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