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| 型号： | NTS2101PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V 1.4A SOT-323 |
| 产品目录绘图： | MOSFET SOT-323, SOT-416 |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.4nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 640pF @ 8V |
| 功率 - 最大： | 290mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTS2101PT1GOSDKR |
NTS2101P
Power MOSFET
?8.0 V, ?1.4 A, Single P?Channel, SC?70
Features
?
?
?
?
Leading Trench Technology for Low R DS(on) Extending Battery Life
?1.8 V Rated for Low Voltage Gate Drive
SC?70 Surface Mount for Small Footprint (2 x 2 mm)
Pb?Free Package is Available
V (BR)DSS
http://onsemi.com
R DS(on) Typ
65 m W @ ?4.5 V
I D Max
Applications
? High Side Load Switch
? Charging Circuit
? Single Cell Battery Applications such as Cell Phones,
Digital Cameras, PDAs, etc.
?8.0 V
78 m W @ ?2.5 V
117 m W @ ?1.8 V
P?Channel MOSFET
S
?1.4 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
?8.0
± 8.0
Units
V
V
G
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 70 ° C
I D
?1.4
?1.1
A
D
Power Dissipation
(Note 1)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 25 ° C
P D
?1.5
0.29
A
W
3
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
t ≤ 5s
0.33
W
3
Pulsed Drain Current tp = 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
T STG
?3.0
?55 to
150
A
° C
1
2
SC?70/SOT?323
CASE 419
1
TS M G
G
2
Source Current (Body Diode), Continuous
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
?0.46
260
A
° C
STYLE 8
TS
Gate
= Device Code
Source
THERMAL RESISTANCE RATINGS
M
G
= Date Code*
= Pb?Free Package
Parameter
Junction?to?Ambient – Steady State (Note 1)
Junction?to?Ambient ? t ≤ 5 s (Note 1)
Symbol
R q JA
R q JA
Max
430
375
Units
° C/W
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
ORDERING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the
Device
Package
Shipping ?
Recommended Operating Conditions may affect device reliability.
1. Surface?mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
NTS2101PT1
NTS2101PT1G
SOT?323
SOT?323
(Pb?Free)
3000/Tape & Reel
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 1
1
Publication Order Number:
NTS2101P/D
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