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| 型号： | NTTFS4930NTWG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 23A 8WDFN |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 476pF @ 15V |
| 功率 - 最大： | 790mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WDFN（3.3x3.3） |
| 包装： | 带卷 (TR) |
NTTFS4930N
Power MOSFET
30 V, 23 A, Single N ? Channel, m 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Converters
? Power Load Switch
? Notebook Battery Management
? Motor Control
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
23 m W @ 10 V
30 m W @ 4.5 V
N ? Channel MOSFET
I D MAX
23 A
D (5 ? 8)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
Continuous Drain
Current R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
7.2
5.2
A
S (1,2,3)
Power Dissipation R q JA
(Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
P D
I D
P D
I D
2.06
9.6
6.9
3.61
4.5
3.2
W
A
W
A
1
WDFN8
( m 8FL)
CASE 511AB
4930
A
MARKING DIAGRAM
1
S D
S 4930 D
S AYWW G D
G G D
= Specific Device Code
= Assembly Location
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC (Note 1)
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
P D
I D
0.79
23
16
W
A
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
Power Dissipation T C = 25 ° C
R q JC (Note 1)
Pulsed Drain Current T A = 25 ° C, t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche Energy
(T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 12 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
P D
I DM
T J ,
T stg
I S
dV/dt
E AS
T L
20.2
92
? 55 to
+150
25
6.0
7.2
260
W
A
° C
A
V/ns
mJ
° C
ORDERING INFORMATION
Device Package Shipping ?
NTTFS4930NTAG WDFN8 1500/Tape & Reel
(Pb ? Free)
NTTFS4930NTWG WDFN8 5000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 2
1
Publication Order Number:
NTTFS4930N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTTFS4932N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 79 A, Single N−Channel, μ8FL |
| NTTFS4932NTAG | 功能描述:MOSFET 30V 79A 4 mOhm Single N-Chan u8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS4932NTWG | 功能描述:MOSFET 30V 79A 4 mOhm Single N-Chan u8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTFS4937N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 75 A, Single N−Channel, 8FL |
| NTTFS4937NTAG | 功能描述:MOSFET 30V 75A 4.5 mOhm Single N-Chan u8FL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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