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参数资料
| 型号： | NTZD3152P |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 20V, 430mA, Dual P Channel with ESD Protection, SOT563(20V，430mA双功率MOSFET) |
| 中文描述： | 小信号MOSFET 20V的，四百三十毫安，双P通道带ESD保护，SOT563封装（20V的，四百三十毫安双功率MOSFET的） |
| 文件页数： | 2/5页 |
| 文件大小： | 131K |
| 代理商： | NTZD3152P |
NTZD3152P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
to
Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
250 A
20
V
Drain
to
Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
18
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
1.0
A
V
DS
=
16
V
2.0
Gate
to
Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
4.5
V
2.0
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
=
250 A
0.45
1.0
V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
1.9
mV/
°
C
Drain
to
Source On Resistance
R
DS(on)
V
GS
=
4.5
V, I
D
=
430 mA
0.5
0.9
V
GS
=
2.5
V, I
D
=
300 mA
0.6
1.2
V
GS
=
1.8
V, I
D
=
150 mA
1.0
2.0
Forward Transconductance
g
FS
V
DS
=
10 V, I
D
=
430 mA
1.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
=
16 V
105
175
pF
Output Capacitance
C
OSS
15
30
Reverse Transfer Capacitance
C
RSS
10
20
Total Gate Charge
Q
G(TOT)
V
GS
=
4.5 V, V
=
10 V,
I
D
=
215 mA
1.7
2.5
nC
Threshold Gate Charge
Q
G(TH)
0.1
Gate
to
Source Charge
Q
GS
0.3
Gate
to
Drain Charge
Q
GD
0.4
SWITCHING CHARACTERISTICS
(Note 3)
Turn
On Delay Time
t
d(on)
V
GS
=
4.5 V, V
=
10 V,
I
D
=
215 mA, R
G
= 10
10
ns
Rise Time
t
r
12
Turn
Off Delay Time
t
d(off)
35
Fall Time
t
f
19
DRAIN
SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
=
350 mA
T
J
= 25
°
C
0.8
1.2
V
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/ s,
I
S
=
350 mA
13
ns
2. Pulse Test: pulse width
3. Switching characteristics are independent of operating junction temperatures.
300 s, duty cycle
2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3152PT1G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3152PT1H | 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA 900 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 430MA TR |
| NTZD3152PT5G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3152PT5H | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 |
| NTZD3154N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 540 mA, Dual N−Channel |
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