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参数资料
| 型号： | NTZD3152P |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 20V, 430mA, Dual P Channel with ESD Protection, SOT563(20V，430mA双功率MOSFET) |
| 中文描述： | 小信号MOSFET 20V的，四百三十毫安，双P通道带ESD保护，SOT563封装（20V的，四百三十毫安双功率MOSFET的） |
| 文件页数： | 5/5页 |
| 文件大小： | 131K |
| 代理商： | NTZD3152P |
NTZD3152P
http://onsemi.com
5
PACKAGE DIMENSIONS
H
E
DIM
A
b
C
D
E
e
L
MIN
0.50
0.17
0.08
NOM
0.55
0.22
0.12
MAX
0.60
0.27
0.18
MILLIMETERS
1.50
1.10
1.60
1.20
0.5 BSC
0.20
1.60
1.70
1.30
0.10
1.50
0.30
1.70
0.020
0.007
0.003
0.021
0.009
0.005
0.023
0.011
0.007
0.059
0.043
0.062
0.047
0.02 BSC
0.008
0.062
0.066
0.051
0.004
0.059
0.012
0.066
MIN
NOM
MAX
INCHES
SOT
563, 6 LEAD
CASE 463A
01
ISSUE F
e
M
0.08 (0.003)
X
b
6 PL
A
C
X
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
1
2
3
4
5
L
6
1.35
0.0531
0.5
0.0197
mm
inches
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support
: 800
282
9855 Toll Free
USA/Canada
Japan
: ON Semiconductor, Japan Customer Focus Center
2
9
1 Kamimeguro, Meguro
ku, Tokyo, Japan 153
0051
Phone
: 81
3
5773
3850
NTZD3152P/D
LITERATURE FULFILLMENT
:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082
1312 USA
Phone
: 480
829
7710 or 800
344
3860 Toll Free USA/Canada
Fax
: 480
829
7709 or 800
344
3867
Toll Free USA/Canada
Email
: orderlit@onsemi.com
ON Semiconductor Website
: http://onsemi.com
Order Literature
: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
相关PDF资料 |
PDF描述 |
|---|---|
| NTZD3154N | 20V,540mA,Dual N Channel Small Signal MOSFET(20V,540mA,双N沟道小信号MOSFET) |
| NTZD3155C | Small Signal MOSFET Complementary 20V, 540mA/430mA, with ESD protection, SOT563 package.(20V，540mA/430mA双功率MOSFET带ESD保护) |
| NTZS3151P | Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V，950mA双功率MOSFET带ESD保护) |
| NUD3105D | Integrated Relay, Inductive Load Driver |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3152PT1G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3152PT1H | 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA 900 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 430MA TR |
| NTZD3152PT5G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3152PT5H | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 |
| NTZD3154N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 540 mA, Dual N−Channel |
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