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参数资料
| 型号： | NTZD3152P |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 20V, 430mA, Dual P Channel with ESD Protection, SOT563(20V，430mA双功率MOSFET) |
| 中文描述： | 小信号MOSFET 20V的，四百三十毫安，双P通道带ESD保护，SOT563封装（20V的，四百三十毫安双功率MOSFET的） |
| 文件页数： | 3/5页 |
| 文件大小： | 131K |
| 代理商： | NTZD3152P |
NTZD3152P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
1 V
100
°
C
0
1
5
0.6
6
3
2
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
D
0.4
0.2
0
1
Figure 1. On
Region Characteristics
0.5
1
2
1.5
2.5
0.8
0.4
0.2
1
0
0
Figure 2. Transfer Characteristics
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
0.5
3
5
0.7
0.6
0.4
Figure 3. On
Resistance vs. Gate
to
Source
Voltage
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
R
D
D
T
S
I
D
D
0.1
1.0
0.8
Figure 4. On
Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50
0
25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. On
Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
2
4
T
J
=
55
°
C
I
D
=
0.43 A
T
J
= 25
°
C
1.4
0.5
75
150
T
J
= 25
°
C
I
D
=
0.43 A
V
GS
=
4.5 V
R
D
D
T
S
R
4
25
°
C
R
D
D
T
S
1.6
V
GS
=
1.8 V
1.2 V
1
6
1.4 V
1.6 V
1.3
0.6
1.1
V
GS
=
2.5 V
7
10
V
DS
≥
10 V
0.8
0.2
0.3
0.4
0.9
V
GS
=
1.8 V
V
GS
=
2 V
Figure 6. Drain
to
Source Leakage Current
vs. Voltage
2
4
8
10
20
16
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
I
D
,
T
J
= 150
°
C
T
J
= 100
°
C
100
1000
10000
6
10
18
14
0.45
0.65
0.55
0.75
0.7
1.0
1.2
0.5
0.6
0.7
0.8
0.9
0.8
8
9
0.6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3152PT1G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3152PT1H | 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA 900 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 430MA TR |
| NTZD3152PT5G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3152PT5H | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 |
| NTZD3154N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 540 mA, Dual N−Channel |
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