参数资料
型号: NTZD3154NT5G
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CHAN DUAL 20V SOT-563
标准包装: 8,000
FET 型: 2 个 N 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 540mA
开态Rds(最大)@ Id, Vgs @ 25° C: 550 毫欧 @ 540mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 2.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 150pF @ 16V
功率 - 最大: 250mW
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-563
包装: 带卷 (TR)
NTZD3154N
TYPICAL PERFORMANCE CURVES (T J = 25 ° C unless otherwise noted)
200
T J = 25 ° C
5
Q T
20
150
100
C RSS
V GS = 0 V
C ISS
4
3
2
V DS
V GS
16
12
8
50
Q GS
Q GD
0
5
V DS = 0 V
V GS
0
V DS
5
C OSS
10
15
20
1
0
0
0.2
I D = 0.54 A
T J = 25 ° C
0.4 0.6 0.8 1 1.2 1.4
Q g , TOTAL GATE CHARGE (nC)
4
0
1.6
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage versus Total Charge
100
V DS = 10 V
I D = 0.2 A
V GS = 4.5 V
t d(OFF
0.6
0.5
0.4
V GS = 0 V
T J = 25 ° C
10
t f
)
t d(ON)
0.3
t r
0.2
0.1
1
1
10
100
0
0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
ORDERING INFORMATION
V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
NTZD3154NT1G
NTZD3154NT1H
NTZD3154NT2G
NTZD3154NT2H
NTZD3154NT5G
NTZD3154NT5H
Device
Package
SOT ? 563
(Pb ? Free)
Shipping
4000 / Tape & Reel
8000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
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