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参数资料
| 型号： | NTZD3154NT5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 20V SOT-563 |
| 标准包装： | 8,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 550 毫欧 @ 540mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 16V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NTZD3154N
PACKAGE DIMENSIONS
SOT ? 563, 6 LEAD
CASE 463A
ISSUE F
D
? X ?
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
6
1
e
5
2
4
3
E
? Y ?
b 65 PL
0.08 (0.003)
M
X Y
H E
C
DIM
A
b
C
D
E
e
L
H E
MILLIMETERS
MIN NOM MAX
0.50 0.55 0.60
0.17 0.22 0.27
0.08 0.12 0.18
1.50 1.60 1.70
1.10 1.20 1.30
0.5 BSC
0.10 0.20 0.30
1.50 1.60 1.70
INCHES
MIN NOM MAX
0.020 0.021 0.023
0.007 0.009 0.011
0.003 0.005 0.007
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
1.35
0.0531
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTZD3154N/D
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| NTZD3155C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. |
| NTZD3155CT1G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET 20V SOT-563 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET, 20V, SOT-563 |
| NTZD3155CT1H | 制造商:ON Semiconductor 功能描述:COMP SOT563 20V 540MA TR - Tape and Reel 制造商:ON 功能描述:COMP SOT563 20V 540MA TR |
| NTZD3155CT2G | 功能描述:MOSFET COMP 540mA 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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