参数资料
| 型号： | NUD3105LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC INDCT LOAD/RELAY DRVR SOT23 |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 900 毫欧 |
| 电流 - 输出 / 通道： | 400mA |
| 电流 - 峰值输出： | 500mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUD3105LT1OSCT |
NUD3105, NUD3105D
Drain (3)
Drain (6)
Drain (3)
Gate (2)
1.0 k
1.0 k
Gate (5)
Gate (1)
1.0 k
300 k
300 k
300 k
Source (1)
Source (4)
CASE 318
Source (2)
CASE 318F
Figure 1. Internal Circuit Diagrams
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Symbol
V DSS
V GS
I D
E z
E zpk
T J
T A
T stg
Rating
Drain to Source Voltage ? Continuous
Gate to Source Voltage – Continuous
Drain Current – Continuous
Single Pulse Drain ? to ? Source Avalanche Energy ( T Jinitial = 25 ° C) (Note 2)
Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Value
6.0
6.0
500
50
4.5
150
? 40 to 85
? 65 to +150
Unit
V dc
V dc
mA
mJ
mJ
° C
° C
° C
P D
R q JA
Total Power Dissipation (Note 1)
Derating Above 25 ° C
Total Power Dissipation (Note 1)
Derating Above 25 ° C
Thermal Resistance, Junction ? to ? Ambient
SOT ? 23
SC ? 74
SOT ? 23
SC ? 74
225
1.8
380
1.5
556
329
mW
mW/ ° C
mW
mW/ ° C
° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD ? 883, Method 3015.
Machine Model Method 200 V.
2. Refer to the section covering Avalanche and Energy.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V BRDSS
B VGSO
I DSS
I GSS
Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA)
I g = 1.0 mA
Drain to Source Leakage Current
(V DS = 5.5 V , V GS = 0 V, T J = 25 ° C)
(V DS = 5.5 V, V GS = 0 V, T J = 85 ° C )
Gate Body Leakage Current (318)
(V GS = 3.0 V, V DS = 0 V)
(V GS = 5.0 V, V DS = 0 V)
Gate Body Leakage Current (318F)
(V GS = 3.0 V, V DS = 0 V)
(V GS = 5.0 V, V DS = 0 V)
6.0
?
?
?
5.0
?
5.0
?
8.0
?
?
?
?
?
?
?
9.0
8.0
15
15
19
50
35
65
V
V
m A
m A
m A
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