参数资料
型号: NUD3160
厂商: ON SEMICONDUCTOR
英文描述: Industrial Inductive Load Driver(工业电感负载驱动器)
中文描述: 工业感性负载驱动器(工业电感负载驱动器)
文件页数: 2/9页
文件大小: 85K
代理商: NUD3160
NUD3160
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Symbol
Rating
Value
Unit
V
DSS
DraintoSource Voltage – Continuous
(T
J
= 125
°
C)
60
V
V
GSS
GatetoSource Voltage – Continuous
(T
J
= 125
°
C)
12
V
I
D
Drain Current – Continuous
(T
J
= 125
°
C)
150
mA
E
Z
Single Pulse DraintoSource Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
200
mJ
P
PK
Peak Power Dissipation, DraintoSource (Notes 1 and 2)
(T
J
Initial
= 85
°
C)
20
W
E
LD1
Load Dump Pulse, DraintoSource (Note 3)
R
SOURCE
= 0.5 , T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
60
V
E
LD2
Inductive Switching Transient 1, DraintoSource
(Waveform: R
SOURCE
= 10 , T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
100
V
E
LD3
Inductive Switching Transient 2, DraintoSource
(Waveform: R
SOURCE
= 4.0 , T = 50 s)
(For Relay’s Coils/Inductive Loads of 80 or Higher)
(T
J
Initial
= 85
°
C)
300
V
RevBat
Reverse Battery, 10 Minutes (DraintoSource)
(For Relay’s Coils/Inductive Loads of 80 or more)
14
V
DualVolt
Dual Voltage Jump Start, 10 Minutes (DraintoSource)
28
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2000
V
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
T
A
Operating Ambient Temperature
40 to 125
°
C
T
J
Maximum Junction Temperature
150
°
C
T
STG
Storage Temperature Range
65 to 150
°
C
P
D
Total Power Dissipation (Note 4)
Derating above 25
°
C
SOT23
225
1.8
mW
mW/
°
C
P
D
Total Power Dissipation (Note 4)
Derating above 25
°
C
SC74
380
3.0
mW
mW/
°
C
R
JA
Thermal Resistance Junction–to–Ambient (Note 4)
SOT23
SC74
556
329
°
C/W
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 12.
3. Nonrepetitive load dump pulse per Figure 3.
4. Mounted onto minimum pad board.
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