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参数资料
| 型号： | NUD3160 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Industrial Inductive Load Driver(工业电感负载驱动器) |
| 中文描述： | 工业感性负载驱动器（工业电感负载驱动器） |
| 文件页数： | 5/9页 |
| 文件大小： | 85K |
| 代理商： | NUD3160 |
NUD3160
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise specified)
Figure 4. DraintoSource Leakage vs.
Junction Temperature
Figure 5. GatetoSource Leakage vs.
Junction Temperature
Figure 6. Breakdown Voltage vs.
Junction Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
, JUNCTION TEMPERATURE (
°
C)
75
50
25
0
25
50
0
10
20
30
40
50
80
100
50
25
0
25
50
20
30
40
50
60
70
80
Figure 7. Output Characteristics
T
J
, JUNCTION TEMPERATURE (
°
C)
125
50
0
25
50
65.0
65.2
65.4
65.8
66.0
66.4
I
D
,
125
100
75
125
I
G
V
GS
= 5 V
V
GS
= 3 V
25
100
75
65.6
64.8
B
D
I
D
= 10 mA
Figure 8. Transfer Function
V
DS
= 60 V
Figure 9. On Resistance Variation vs
Junction Temperature
V
DS
, DRAINTOSOURCE VOLTAGE (V)
0.7
0.5
0.4
0.3
0.2
0.0
1E03
1E02
1E01
1E+00
1E+01
1E+03
0.1
0.6
0.8
I
D
V
GS
= 5 V
V
GS
= 3 V
60
V
GS
= 2 V
V
GS
= 2.5 V
V
GS
= 1.5 V
V
GS
, GATETOSOURCE VOLTAGE (V)
2.6
2.0
1.8
1.6
1.4
1.0
1E07
1E05
1E06
1E04
0.1
1
1.2
2.4
I
D
125
°
C
2.2
0.001
0.01
85
°
C
25
°
C
40
°
C
V
DS
= 0.8 V
T
J
, JUNCTION TEMPERATURE (
°
C)
75
50
25
0
25
50
800
1200
1600
2000
2400
2800
R
D
,
125
100
I
D
= 0.15 A
3200
V
GS
= 5.0 V
V
GS
= 3.0 V
70
66.2
1E+02
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