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参数资料
| 型号： | NUD3160 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Industrial Inductive Load Driver(工业电感负载驱动器) |
| 中文描述： | 工业感性负载驱动器（工业电感负载驱动器） |
| 文件页数： | 3/9页 |
| 文件大小： | 85K |
| 代理商： | NUD3160 |
NUD3160
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(I
D
= 10 mA)
V
BRDSS
61
66
70
V
Drain to Source Leakage Current
(V
DS
= 12 V, V
GS
= 0 V)
(V
DS
= 12 V, V
GS
= 0 V, T
J
= 125
°
C)
(V
DS
= 60 V, V
GS
= 0 V)
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 125
°
C)
I
DSS
0.5
1.0
50
80
A
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 3.0 V, V
DS
= 0 V, T
J
= 125
°
C)
(V
GS
= 5.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V, T
J
= 125
°
C)
I
GSS
60
80
90
110
A
ON CHARACTERISTICS
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 125
°
C)
V
GS(th)
1.3
1.3
1.8
2.0
2.0
V
Drain to Source OnResistance
(I
D
= 150 mA, V
GS
= 3.0 V)
(I
D
= 150 mA, V
GS
= 3.0 V, T
J
= 125
°
C)
(I
D
= 150 mA, V
GS
= 5.0 V)
(I
D
= 150 mA, V
GS
= 5.0 V, T
J
= 125
°
C)
R
DS(on)
2.4
3.7
1.8
2.9
Output Continuous Current
(V
DS
= 0.3 V, V
GS
= 5.0 V)
(V
DS
= 0.3 V, V
GS
= 5.0 V, T
J
= 125
°
C)
I
DS(on)
150
100
200
mA
Forward Transconductance
(V
DS
= 12 V, I
D
= 150 mA)
g
FS
400
mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
C
iss
30
pf
Output Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
C
oss
14
pf
Transfer Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
C
rss
6.0
pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
Low to High Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
High to Low Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
Low to High Propagation Delay; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
t
PHL
t
PLH
t
PHL
t
PLH
918
798
331
1160
ns
Transition Times:
Fall Time; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
Rise Time; Figure 2, (V
DS
= 12 V, V
GS
= 3.0 V)
Fall Time; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
Rise Time; Figure 2, (V
DS
= 12 V, V
GS
= 5.0 V)
t
f
t
r
t
f
t
r
2290
618
622
600
ns
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