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参数资料
| 型号： | NUP4201DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/8页 |
| 文件大小： | 0K |
| 描述： | IC TVS LO CAP HS DATA 500W 8SOIC |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 功率（瓦特）： | 500W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NUP4201DR2GOSDKR |
NUP4201DR2
Power
Supply
V CC
I ESDpos
inductance will provide significant benefits in transient
immunity.
Even with good board layout, some disadvantages are still
present when discrete diodes are used to suppress ESD
Protected Data Line
Device
D1
D2
I ESDpos
I ESDneg
VF + V CC
I ESDneg
events across datalines and the supply rail. Discrete diodes
with good transient power capability will have larger die and
therefore higher capacitance. This capacitance becomes
problematic as transmission frequencies increase. Reducing
capacitance generally requires reducing die size. These
small die will have higher forward voltage characteristics at
? VF
Figure 8.
Looking at the figure above, it can be seen that when a
positive ESD condition occurs, diode D1 will be forward
biased while diode D2 will be forward biased when a
negative ESD condition occurs. For slower transient
conditions, this system may be approximated as follows:
typical ESD transient current levels. This voltage combined
with the smaller die can result in device failure.
The ON Semiconductor NUP4201DR2 was developed to
overcome the disadvantages encountered when using
discrete diodes for ESD protection. This device integrates a
TVS diode within a network of steering diodes.
For positive pulse conditions:
D1
D3
D5
D7
Vc = Vcc + Vf D1
For negative pulse conditions:
Vc = ? Vf D2
ESD events can have rise times on the order of some
D2
D4
D6
D8
number of nanoseconds. Under these conditions, the effect
of parasitic inductance must be considered. A pictorial
representation of this is shown below.
Power
Supply
V CC
I ESDpos
0
Figure 10. NUP4201DR2 Equivalent Circuit
During an ESD condition, the ESD current will be driven
Protected
Device
Data Line
D1
I ESDpos
I ESDneg
to ground through the TVS diode as shown below.
Power
D2
V C = V CC + Vf + (L diESD/dt)
I ESDneg
Supply
V CC
D1
I ESDpos
V C = ? Vf ? (L diESD/dt)
Figure 9.
An approximation of the clamping voltage for these fast
Protected
Device
Data Line
D2
transients would be:
For positive pulse conditions:
Vc = Vcc + Vf + (L di ESD /dt)
For negative pulse conditions:
Vc = ? Vf – (L di ESD /dt)
As shown in the formulas, the clamping voltage (Vc) not
only depends on the Vf of the steering diodes but also on the
L di ESD /dt factor. A relatively small trace inductance can
result in hundreds of volts appearing on the supply rail. This
endangers both the power supply and anything attached to
that rail. This highlights the importance of good board
layout. Taking care to minimize the effects of parasitic
Figure 11.
The resulting clamping voltage on the protected IC will
be:
Vc = V F + V TVS .
The clamping voltage of the TVS diode is provided in
Figure 4 and depends on the magnitude of the ESD current.
The steering diodes are fast switching devices with unique
forward voltage and low capacitance characteristics.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NUP4201DR2G | 制造商:ON Semiconductor 功能描述:; Diode Type:Unidirectional TVS; Stand-O |
| NUP4201MR6 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors |
| NUP4201MR6/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low Capacitance Surface Mount Diode-TVS Array for Protection in Four High Speed Data Lines |
| NUP4201MR6_09 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressors |
| NUP4201MR6T1 | 功能描述:TVS二极管阵列 Low Cap. TVS Array RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
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