参数资料
| 型号： | NUS2045MNT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC OVP W/20V P-CH MOSFET DFN8 |
| 产品变化通告： | Product Obsolescence 29/Oct/2010 |
| 标准包装： | 3,000 |
| 电压 - 工作： | 3 ~ 25V |
| 电压 - 箝位： | 7.08V |
| 技术： | 混合技术 |
| 功率（瓦特）： | 1W |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP（3.3x3.3） |
| 包装： | 带卷 (TR) |
NUS2045MN, NUS3045MN
Overvoltage Protection IC
with Integrated MOSFET
These devices represent a new level of safety and integration by
combining the NCP345 overvoltage protection circuit (OVP) with a
20 V P?channel power MOSFET (NUS2045MN) or with a 30 V
P?channel power MOSFET (NUS3045MN). They are specifically
designed to protect sensitive electronic circuitry from overvoltage
http://onsemi.com
transients and power supply faults. During such hazardous events, the
IC quickly disconnects the input supply from the load, thus protecting
8
MARKING DIAGRAM
the load before any damage can occur.
The OVP ICs are optimized for applications using an external
AC?DC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. They have a nominal overvoltage
1
DFN8
CASE 506AL
1
x045
AYWW G
G
threshold of 6.85 V which makes them ideal for single cell Li?Ion as
well as 3/4 cell NiCD/NiMH applications.
Features
x045 = Device Code
x = 2 or 3
A = Assembly Location
Y = Year
V CC 8 1 IN
GND
OUT
7
2
?
?
?
?
?
?
?
OvervoltageTurn?Off Time of Less Than 1.0 m s
Accurate Voltage Threshold of 6.85 V, Nominal
Undervoltage Lockout Protection; 2.8 V, Nominal
Control Input Compatible with 1.8 V Logic Levels
?20 V or ?30 V Integrated P?Channel Power MOSFET
Low R DS(on) = 71 m W @ ?4.5 V for NUS2045MN
Low R DS(on) = 66 m W @ ?4.5 V for NUS3045MN
Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable
Applications
WW = Work Week
G = Pb?Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
GND
10
GATE 6 3 CNTRL
DRAIN
?
?
Maximum Solder Reflow temperature @ 235 ° C for MNT1 suffix and
260 ° C for MNT1G suffix
Pb?Free Packages are Available
SRC
5
9
(Bottom View)
4
DRAIN
Benefits
? Provide Battery Protection
? Integrated Solution Offers Cost and Space Savings
? Integrated Solution Improves System Reliability
ORDERING INFORMATION
Device Package Shipping ?
NUS2045MNT1 DFN8 3000 Tape & Reel
Applications
? Portable Computers and PDAs
? Cell Phones and Handheld Products
? Digital Cameras
NUS2045MNT1G
NUS3045MNT1
NUS3045MNT1G
DFN8
(Pb?Free)
DFN8
DFN8
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
June, 2006 ? Rev. 4
Publication Order Number:
NUS2045MN/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NUS2045MNT1G | 功能描述:IC OVP W/20V P-CH MOSFET DFN8 RoHS:是 类别:过电压，电流，温度装置 >> TVS - 其它复合 系列:- 标准包装:1 系列:- 电压 - 工作:120V 电压 - 箝位:- 技术:混合技术 功率（瓦特）:- 电路数:1 应用:通用 封装/外壳:模块 供应商设备封装:- 包装:散装 其它名称:UAK 2-PE/S-X-120AC-STUAK2-PE/S-X-120AC-ST |
| NUS2401SNT1 | 功能描述:开关晶体管 - 偏压电阻器 200mA 50V Integrated RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| NUS2401SNT1_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated PNP/NPN Digital Transistors Array |
| NUS2401SNT1G | 功能描述:开关晶体管 - 偏压电阻器 200mA 50V Integrated NPN/PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| NUS2501W6 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated NPN Digital Transistor with Switching Transistor with Switching |
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