参数资料
| 型号： | NUS3045MNT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC OVP W/30V P-CH MOSFET DFN8 |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 3,000 |
| 电压 - 工作： | 3 ~ 25V |
| 电压 - 箝位： | 7.08V |
| 技术： | 混合技术 |
| 功率（瓦特）： | 1W |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP（3.3x3.3） |
| 包装： | 带卷 (TR) |
NUS2045MN, NUS3045MN
Schottky
AC/DC Adapter of
Accessory Charger
IN
V CC
P?CH
Diode
Undervoltage
Lock Out
GATE
+
+
?
Logic
FET
Driver
OUT
C1
LOAD
V ref
NUSx045
GND
CNTRL
Microprocessor Port
Figure 1. Simplified Schematic
PIN FUNCTION DESCRIPTIONS
Pin #
1
2, 10
3
4, 9
5
6
7
8
Symbol
IN
GND
CNTRL
DRAIN
SRC
GATE
OUT
V CC
Pin Description
This pin senses an external voltage point. If the voltage on this input rises above the overvoltage threshold
(V TH ), the OUT pin will be driven to within 1.0 V of V CC , thus disconnecting the FET. The nominal threshold level
is 6.85 V and this threshold level can be increased with the addition of an external resistor between IN and V CC .
Circuit Ground
This logic signal is used to control the state of OUT and turn?on/off the P?channel MOSFET. A logic High
results in the OUT signal being driven to within 1.0 V of V CC which disconnects the FET. If this pin is not used,
the input should be connected to ground.
Drain pin of the power MOSFET
Source pin of the power MOSFET
Gate pin of the power MOSFET
This signal drives the gate of a P?channel MOSFET. It is controlled by the voltage level on IN or the logic state
of the CNTRL input. When an overvoltage event is detected, the OUT pin is driven to within 1.0 V of V CC in less
than 1.0 _sec provided that gate and stray capacitance is less than 12 nF.
Positive Voltage supply. If V CC falls below 2.8 V (nom), the OUT pin will be driven to within 1.0 V of V CC , thus
disconnecting the P?channel FET.
OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE
IN
<V th
<V th
>V th
>V th
CNTRL
L
H
L
H
OUT
GND
V CC
V CC
V CC
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NUS3045MNT1G | 功能描述:监控电路 PM OVP W/MOSFET 30V RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NUS3046MN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Overvoltage Protection IC with Integrated MOSFET |
| NUS3046MNT1G | 功能描述:MOSFET 5.5V OVP IC W/ FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUS3055MUTAG | 功能描述:监控电路 LO PROFILE OVERVLTG PROTECT IC RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NUS3065MU | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Profile Overvoltage Protection IC with Integrated MOSFET |
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