参数资料
型号: NX3008NBKV
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 30 V, 400 mA dual N-channel Trench MOSFET
中文描述: SMALL SIGNAL, FET
封装: PLASTIC, 6 PIN
文件页数: 12/17页
文件大小: 863K
代理商: NX3008NBKV
NX3008NBKV
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
12 of 17
NXP Semiconductors
NX3008NBKV
30 V, 400 mA dual N-channel Trench MOSFET
9.
Package outline
Fig 18. Package outline SOT666 (SOT666)
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
IEC
JEDEC
JEITA
mm
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
0.5
e
1.0
1.7
1.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0
1
2 mm
scale
A
0.6
0.5
c
X
1
2
3
4
5
6
Plastic surface-mounted package; 6 leads
SOT666
Y S
w
M
A
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相关代理商/技术参数
参数描述
NX3008NBKV,115 功能描述:MOSFET 30V 400 MA DUAL N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NX3008NBKW 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 350MA SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 350MA, SOT323 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 350MA, SOT323, Transistor Polarity:N Channel, Continuous Drai
NX3008NBKW,115 功能描述:MOSFET 30V 350 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NX3008PBK 制造商:NXP Semiconductors 功能描述:MOSFET P CH 30V 230MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, P CH, 30V, 230MA, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV ;RoHS Compliant: Yes
NX3008PBK,215 功能描述:MOSFET 30V 230 MA P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube