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| 型号： | OP520DA |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | PHOTODARLINGTON NPN BLK 1206 SMD |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 35V |
| 电流 - 集电极 (Ic)（最大）： | 30mA |
| 电流 - 暗 (Id)（最大）： | 200nA |
| 波长： | 935nm |
| 视角： | 150° |
| 功率 - 最大： | 100mW |
| 安装类型： | 表面贴装 |
| 方向： | 顶视图 |
| 封装/外壳： | 1206（3216 公制） |
| 产品目录页面： | 2789 (CN2011-ZH PDF) |
| 其它名称： | 365-1474-1 |
Silicon Photo Darlington in Miniature 1206 SMD
Package
OP520DA, OP521DA
Absolute Maximum Ratings T A = 25 o C unless otherwise noted
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
Electrical Characteristics (T A = 25 r C unless otherwise noted)
- 40° C to +100° C
-25° C to +85° C
260° C (1)
35V
5V
30 mA
100 mW (2)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
CONDITIONS
I C(ON)
V CE(SAT)
I CEO
V (BR)CEO
V (BR)ECO
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
10.0
35
5
1.7
200
mA
V
nA
V
V
V CE = 5.0V, E e = 0.5mW/cm 2 (3)
I C = 1mA, E e = 5.0mW/cm 2 (3)
V CE = 5.0V, E e = 0 (4)
I C = 100μA, E e = 0
I E = 100μA, E e = 0
Spectral range of sensitivity
OP521DA
OP520DA
400
700
1100
1100
nm
V CE = 5.0V
t r , t f
Rise and Fall Times
50
μs
I C = 1mA, R L = 1K
3.
4.
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the photo darlington being tested.
To Calculate typical collector dark current in μA, use the formula I CEO = 10 (0.04 TA-3/4) where T A is the ambient temperature in ° C.
40
35
30
25
20
15
10
5
Relative Collector Current-I C (mA)
vs. Irradiance-Ee (mW/cm 2 )
Normalized at E e = 1mW/cm 2
Conditions: V CE = 5V,
= 935nm, T A = 25 ° C
140%
130%
120%
110%
100%
90%
80%
70%
Relative On-State Collector Current
vs. Temperature —(T A )
Normalized at T A = 25 ° C . 80 ° C
Conditions: V CE = 5V,
= 935nm, T A = 25 ° C
-40 ° C
0
0.5
1.0
1.5
2.0
-25
0
25
50
75
100
Irradiance- Ee (mW/cm )
2
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323 – 2396 sensors@optekinc.com www.optekinc.com
Temperature — T A ( ° C)
Issue A 03.08
Page 2 of 4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP521 | 功能描述:光电晶体管 Phototrans Clear RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP521 | 制造商:TT Electronics / OPTEK Technology 功能描述:Transistor |
| OP521DA | 功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP522 | 功能描述:光电晶体管 Phototrans Clear RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP522 | 制造商:TT Electronics / OPTEK Technology 功能描述:Transistor |
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