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参数资料
| 型号： | OP525DA |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | PHOTODARLINGTON NPN CLR 1210 SMD |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 35V |
| 电流 - 集电极 (Ic)（最大）： | 30mA |
| 电流 - 暗 (Id)（最大）： | 200nA |
| 波长： | 935nm |
| 视角： | 25° |
| 功率 - 最大： | 100mW |
| 安装类型： | 表面贴装 |
| 方向： | 顶视图 |
| 封装/外壳： | 1210（3225 公制） |
| 其它名称： | 365-1476-1 |
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
Features:
? High Speed and High photo sensitivity
OP525 and OP525DA
OP525F
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Fast response time
1210 package size
High Current Gain
Water clear and black lens choices
Narrow Viewing Receiving Angle
Compatible with IR Reflow soldering process
Moisture Sensitivity Level: MSL3
Description:
These devices consist of an NPN silicon phototransistor and photo darlington mounted in a miniature SMD
package with a 1210 size chip carrier that is compatible with most automated mounting and position sensing
equipment.
The OP525 devices have a 1.8mm domed lens and viewing acceptance angle of 25° with higher collector current
gains due to the lenses on package. The OP525 and OP525DA have a water clear lens that senses ambient light
to higher wavelengths for applications from 450nm to 1120nm. The OP525F has a black domed lens to reduce
ambient light noise.
The OP525 series are tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters.
Photo darlington devices are normally used in application where light signals are low and more current gain is
needed than is possible with phototransistors .
Applications:
Ordering Information
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Non-contact position sensing
Datum detection
Machine automation
Optical encoders
Reflective and transmissive sensors
Part Number
OP525
OP525DA
OP525F
Sensor
Phototransistor
Photo Darlington
Phototransistor
Viewing Angle
25o
25o
25o
OP525 and OP525F
Pin # Transistor
1
2
Collector
Emitter
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F
05/2012
Page 1 of 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP525F | 功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP526,005 | 功能描述:MOSFET OP526/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP528,005 | 功能描述:MOSFET OP528/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP529,005 | 功能描述:MOSFET OP529/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP530 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:NPN SILICON PHOTODARLINGTON |
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