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参数资料
| 型号： | OP525DA |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | PHOTODARLINGTON NPN CLR 1210 SMD |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 35V |
| 电流 - 集电极 (Ic)（最大）： | 30mA |
| 电流 - 暗 (Id)（最大）： | 200nA |
| 波长： | 935nm |
| 视角： | 25° |
| 功率 - 最大： | 100mW |
| 安装类型： | 表面贴装 |
| 方向： | 顶视图 |
| 封装/外壳： | 1210（3225 公制） |
| 其它名称： | 365-1476-1 |
Silicon Phototransistor and Photo Darlington
in 1210 SMD Package
OP525, OP525DA, OP525F
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature (1)
Collector-Emitter Voltage
OP525, OP525F
OP525DA
Emitter-Collector Voltage
Collector Current
OP525, OP525F
OP525DA
Power Dissipation (2)
OP525, OP525F
OP525DA
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-40 o C to +100 o C
-40 o C to +80 o C
260° C
30 V
35 V
5V
20 mA
30 mA
75 mW
100 mW
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
I C(ON)
V CE(SAT)
On-State Collector Current
OP525F
OP525
OP525DA
Collector-Emitter Saturation Voltage
OP525, OP525F
OP525DA
2.0
1.0
10.0
-
-
-
-
-
-
-
-
-
-
0.4
1.7
mA
V
V CE = 5.0 V, E E = 0.5 mW/cm 2
V CE = 5.0 V, E E = 1.5 mW/cm 2 (3)
V CE = 5.0 V, E E = 0.15 mW/cm 2 (3)
I C = 100 μA, E E = 1.0 mW/cm 2 (3)
I C = 1 mA, E E = 0.5 mW/cm 2 (3)
Collector-Emitter Dark Current
I CEO
OP525, OP525F
OP525DA
-
-
100
200
nA
V CC = 10.0 V (4)
Collector-Emitter Breakdown Voltage
V BR(CEO)
OP525, OP525F
OP525DA
30
35
-
-
V
I C = 100 μA, E E = 0
I C = 1 mA, E E = 0
Emitter-Collector Breakdown Voltage
V BR(ECO)
OP525, OP525F
OP525DA
5
5
-
-
-
-
V
I E = 100 μA, E E = 0
I E = 100 μA, E E = 0
Rise and Fall Times
t r, t f
λ 0.5
OP525, OP525F
OP525DA
Spectral Bandwidth OP525F
-
750
15
50
-
-
-
1100
μs
nm
I C = 1 mA, R L = 1K ?
I C = 1 mA, R L = 1K ?
-
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less
than 10% over the entire lens surface of the phototransistor being tested.
4. To calculate typical collector dark current in μA, use the formulate I CEO = 10 (0.04 t - ?) , where T A is the ambient temperature in ° C.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue F
05/2012
Page 3 of 5
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PDF描述 |
|---|---|
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| OP550D | PHOTOTRANS SILICON NPN SIDE LOOK |
| OP555D | PHOTOTRNS NPN PLASTIC SIDE LOOK |
| OP560C | PHOTODARLINGTON NPN 935NM SIDELK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP525F | 功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP526,005 | 功能描述:MOSFET OP526/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP528,005 | 功能描述:MOSFET OP528/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP529,005 | 功能描述:MOSFET OP529/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP530 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:NPN SILICON PHOTODARLINGTON |
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