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参数资料
| 型号： | OP580 |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 光敏三极管 |
| 英文描述： | Silicon Phototransistor in SMT Plastic Package |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | ROHS COMPLIANT, MINIATURE, LEADLESS, PLASTIC, SMD, LCC-2 |
| 文件页数： | 1/4页 |
| 文件大小： | 268K |
| 代理商： | OP580 |
Non-Contact Position Sensing
Datum detection
Silicon Phototransistor in SMT
Plastic Package
OP580
Wide Acceptance Angle
Fast Response Time
Plastic Leadless Chip Carrier (PLCC)
The OP580 is an NPN silicon phototransistor mounted in a miniature SMT package. The device has a flat window
lens which enables a wide acceptance angle. This device is packaged in a plastic leadless chip carrier that is
compatible with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the
OP280 infrared LED.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.—
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
A subsidiary of
TT electronics plc
Pb
RoHS
Machine automation
Optical encoders
Applications
OP580
900
1100
1000
0%
20%
40%
60%
80%
100%
R
Wavelength (nm)
Relative Response vs. Wavelength
800
700
600
500
400
相关PDF资料 |
PDF描述 |
|---|---|
| OP600A | PHOTOTRANSISTOR | NPN | 890NM PEAK WAVELENGTH | PILL-A |
| OP600B | PHOTOTRANSISTOR | NPN | 890NM PEAK WAVELENGTH | PILL-A |
| OP600C | PHOTOTRANSISTOR | NPN | 890NM PEAK WAVELENGTH | PILL-A |
| OP600 | NPN SILICON PHOTOTRANSISTORS |
| OP600A | NPN Silicon Phototransistor(NPN光敏晶体管，宽接收角，集电极最小电流1.20mA) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP580 | 制造商:TT Electronics / OPTEK Technology 功能描述:Phototransistor |
| OP580/ABD,029 | 功能描述:MOSFET OP580/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP580DA | 功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP581/ABD,029 | 功能描述:MOSFET OP581/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP582/ABD,029 | 功能描述:MOSFET OP582/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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