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参数资料
| 型号： | OP580 |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRANSISTOR NPN SMD PLCC-2 |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 935nm |
| 视角： | 100° |
| 功率 - 最大： | 75mW |
| 安装类型： | 表面贴装 |
| 方向： | 顶视图 |
| 封装/外壳： | 2-PLCC |
| 产品目录页面： | 2789 (CN2011-ZH PDF) |
| 其它名称： | 365-1162-6 |
Silicon Phototransistor
OP580
Features:
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Wide acceptance angle
Fast response time
Plastic leadless chip carrier (PLCC)
Moisture Sensitivity Level: MSL2 or >
Description:
The OP580 is an NPN silicon phototransistor mounted in a miniature SMD package. The device has a flat window
lens, which enables a wide acceptance angle. It is packaged in a plastic leadless chip carrier that is compatible
with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the OP280
infrared LED.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:
Ordering Information
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Non-contact position sensing
Datum detection
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Machine automation
Optical encoders
Part
Number
OP580
Sensor
Phototransistor
Viewing
Angle
100°
Lead
Length
N/A
1
2
Pin #
1
2
Transistor
Collector
Emitter
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue 1.3 05/10
Page 1 of 3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP580 | 制造商:TT Electronics / OPTEK Technology 功能描述:Phototransistor |
| OP580/ABD,029 | 功能描述:MOSFET OP580/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP580DA | 功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP581/ABD,029 | 功能描述:MOSFET OP581/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP582/ABD,029 | 功能描述:MOSFET OP582/UNCASED/PUTA// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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