参数资料
| 型号： | OPA659IDBVR |
| 厂商： | Texas Instruments |
| 文件页数： | 10/32页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP JFET 650MHZ SGL SOT23-5 |
| 标准包装： | 3,000 |
| 放大器类型： | J-FET |
| 电路数： | 1 |
| 转换速率： | 2550 V/µs |
| 增益带宽积： | 350MHz |
| -3db带宽： | 650MHz |
| 电流 - 输入偏压： | 10pA |
| 电压 - 输入偏移： | 1000µV |
| 电流 - 电源： | 32mA |
| 电流 - 输出 / 通道： | 70mA |
| 电压 - 电源，单路/双路(±)： | ±3.5 V ~ 6.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 带卷 (TR) |
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Input and ESD Protection
External
Pin
Internal
Circuitry
-
V
CC
+
V
CC
PowerPAD Information
SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com
well
as
a
doubly-terminated
line.
If
the
input
shown in the EVM layer views (see Figure 41). For
impedance of the destination device is low, there will
more general data and detailed information about the
be some signal attenuation as a result of the voltage
PowerPAD
package,
refer
to
the
PowerPAD
divider
formed
by
the
series
output
into
the
Thermally
Enhanced
Package
application
note
terminating impedance.
e) Socketing a high-speed part such as the
OPA659 is not recommended. The additional lead
length and pin-to-pin capacitance introduced by the
The OPA659 is built using a very high-speed
socket can create an extremely troublesome parasitic
complementary bipolar process. The internal junction
network that can make it almost impossible to
breakdown voltages are relatively low for these very
achieve a smooth, stable frequency response. Best
small geometry devices. These breakdowns are
results are obtained by soldering the OPA659 directly
reflected in the Absolute Maximum Ratings table. All
onto the board.
device pins are protected with internal ESD protection
diodes to the power supplies, as Figure 39 shows.
f) The thermal slug on bottom of OPA659 DRB
package must be tied to the most negative
supply.
The
DRB
package
is
a
PowerPAD
thermally-enhanced
package.
Best
results
are
obtained by soldering the exposed metal tab on the
bottom of the OPA659 DRB directly to a metal plane
on the PCB that is connected to the most negative
supply voltage of the op amp. General layout
guidelines can be found in the application reports,
PowerPAD Layout
Guidelines (SLOA120)
and
PowerPAD Made Easy (SLMA004) , both available
Figure 39. Internal ESD Protection
for download from the TI web site at www.ti.com. It
may also be helpful to copy the EVM layout shown in
These diodes provide moderate protection to input
the Evaluation Module section.
overdrive voltages above the supplies as well. The
protection
diodes
can
typically
support
30mA
continuous
current.
Where
higher
currents
are
The DRB package option is a PowerPAD package
possible (for example, in systems with ±12V supply
that includes a thermal pad for increased thermal
parts driving into the OPA659), current limiting series
performance.
When
using
this
package,
it
is
resistors should be added into the two inputs. Keep
recommended to distribute the negative supply as a
these resistor values as low as possible because high
power plane, and tie the PowerPAD to this supply
values
degrade
both
noise
performance
and
with multiple vias for proper power dissipation. For
frequency response.
proper operation, the PowerPAD must be tied to the
most negative supply voltage. It is recommended to
use five evenly-spaced vias under the device as
18
Copyright 2008–2009, Texas Instruments Incorporated
Product Folder Link(s): OPA659
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OPA659IDBVT | 功能描述:高速运算放大器 650MHz unity gain stable JFET Inp amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBR | 功能描述:高速运算放大器 650MHz unity gain stable JFET inp Amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBT | 功能描述:高速运算放大器 650MHz unity gain stable JFET inp Amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBT | 制造商:Texas Instruments 功能描述:Operational Amplifier (Op-Amp) IC 制造商:Texas Instruments 功能描述:IC, OP-AMP, 350MHZ, 2550V/ us, SON-8 |
| OPA660 | 制造商:BB 制造商全称:BB 功能描述:Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER |
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