- 您现在的位置：买卖IC网 > PDF目录296750 > P4KE51T 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL PDF资料下载
参数资料
| 型号： | P4KE51T |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 186K |
| 代理商： | P4KE51T |
Silicon Avalanche Diodes
282
www .littelfuse .com
400W Axial Leaded Transient Voltage Supressors
FEATURES
RoHS compliant
Plastic package
Glass passivated chip junction in DO-41 Package
400W surge capability at 10/1000 s wave form
Excellent clamping capability
Low zener impedance
Fast response time: typically less than 1.0ps from 0 Volts
to BV min.
Typical IR less than 1A above 10V
(9.5mm) lead length, 5lbs., (2.3kg) tension
Agency Approvals: Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number: E128662
P4KE Series
MAXIMUM RATINGS AND CHARACTERISTICS
@25C AMBIENT TEMPERATURE (unless otherwise noted)
PARAMETER
Peak Pulse Power Dissipation at
TA=25C, TP=1ms (note 1)
Steady State Power Dissipation at
TL=75C, Lead lenghts .375”,
(9.5mm)(note2)
Peak Forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 3)
Operating junction and Storage
Temperature Range
VALUE
Min
400
1
40
-55 to +175
UNIT
Watts
Amps
°C
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above
TA=25C per Fig 2.
2. 8.3ms single half sine-wave , or equivalent square wave, Duty
cycle = 4 pulses per minutes maximum.
SYMBOL
PPPM
PM(AV)
IFSM
Tj, TsTG
P4KE
C A
Voltage
Bi-Directional
Packaging Option
5% Voltage Tolerance
B= Bulk (500 pcs)
T= Tape and reeled (5000 pcs)
ORDERING INFORMATION
Mechanical Specifications:
Weight:
0.012ounce, 0.3 gram
Case:
JEDEC DO-41 Molded Plastic over
passivated junction
Mounting Position:
Any
Polarity:
Color band denotes cathode except
Bipolar
Terminal:
Plated Axial leads, solderable per
MIL-STD-750, Method 2026
RoHS
相关PDF资料 |
PDF描述 |
|---|---|
| P4KE200CA-E3/4 | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| P4KE250C-E3/23 | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| P4KE6.8CA-E3/23 | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| P4KE62CA-E3/4 | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| P4KE20A-HE3/54 | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| P4KE51-T | 功能描述:TVS 二极管 - 瞬态电压抑制器 _ RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520A-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520CA-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520C-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。