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参数资料
| 型号： | P4KE51T |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 186K |
| 代理商： | P4KE51T |
Silicon Avalanche Diodes
284
www .littelfuse .com
400W Axial Leaded Transient Voltage Supressors
Ratings and Characteristic Curves TA=25C unless otherwise noted
Fig. 5 steady Pulse Derating Curve
TA- Ambient Temperature (C)
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
0
25
0.25
50
0.50
75
0.75
100
1.00
125 150 175 200
Fig. 3 Pulse Waveform
I PPM
-Peak
Pulse
Current,
%
I
RSM
0
50
100
150
1.0
2.0
3.0
4.0
tr=10sec
Peak Value
IPPM
Half Value IPPM
2
TJ=25C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000sec. Waveform
as defined by R.E.A
.375" (9.5mm)
Lead Lengths
60Hz resistive or
inductive load
1.6x1.6x.040"
(40x40x1mm)
td
Fig. 1 Peak Pulse Power Rating
td- Pulse Width (sec.)
P
PPM
-Peak
Pulse
Power
(KW)
0.1s
1.0s
10s
100s
1.0ms
10ms
0.1
1
10
100
Fig. 2 Pulse Derating Curve
TA- Ambient Temperature (C)
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
0
25
50
75
100
125 150 175 200
Fig. 8 Typ. Transient Thermal Impedance
td- Pulse Duration (sec.)
P
PPM
-Peak
Pulse
Power
(KW)
0.001
0.01
0.1
1
10
100 1000
1
10
100
Fig. 6- Maximum Non-Repetitive Peak
I PSM
-Peak
Forward
Surge
Current
(A)
1
10
50
100
200
10
5
100
Number of Cycles at 60Hz
Forward Surge Uni-Directional Only
TJ=TJ MAX
8.3 Single Half Sine-Wave
(JEDEC Method)
Fig. 4- Typ-Junction Capacitance Uni-Directional
C
J
-Junction
Capacitance
(pF)
10000
1000
100
10
1.0
5
10
100
200
VWM-Reverse Stand-Off Voltage (V)
T - Time(ms)
Measured at
Zero Bias
TJ=25C
f=1.0MHZ
Vsig=50mVp-p
Measured at
Stand-Off
Voltage, VWM
Fig. 7 - Typical Reverse Leakage Characteristics
t p
-Instantanious
Reverse
Leakage
Current
(A)
0.01
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
CV
RR
- Breakdown Voltage (V)
P4KE Series
RoHS
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相关代理商/技术参数 |
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|---|---|
| P4KE51-T | 功能描述:TVS 二极管 - 瞬态电压抑制器 _ RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520A-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520CA-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520C-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE520-G | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W, 520V,Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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