参数资料
型号: P89LPC908FD,112
厂商: NXP Semiconductors
文件页数: 35/51页
文件大小: 0K
描述: IC 80C51 MCU FLASH 1K 8-SOIC
产品培训模块: Migrating from 8/16-Bit MCUs to 32-Bit ARMs
标准包装: 1
系列: LPC900
核心处理器: 8051
芯体尺寸: 8-位
速度: 7.3728MHz
连通性: UART/USART
外围设备: 欠压检测/复位,LED,POR,WDT
输入/输出数: 6
程序存储器容量: 1KB(1K x 8)
程序存储器类型: 闪存
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 2.4 V ~ 3.6 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 剪切带 (CT)
配用: 622-1015-ND - BOARD FOR LPC908 8-SOIC
622-1008-ND - BOARD FOR LPC9103 10-HVSON
622-1006-ND - SOCKET ADAPTER BOARD
其它名称: 568-1999-1
Philips Semiconductors
P89LPC906/907/908
8-bit microcontrollers with two-clock 80C51 core
Product data
Rev. 05 — 17 December 2004
40 of 51
9397 750 14467
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
8.24.2
Dual data pointers
The dual Data Pointers (DPTR) provides two different Data Pointers to specify the
address used with certain instructions. The DPS bit in the AUXR1 register selects
one of the two Data Pointers. Bit 2 of AUXR1 is permanently wired as a logic ‘0’ so
that the DPS bit may be toggled (thereby switching Data Pointers) simply by
incrementing the AUXR1 register, without the possibility of inadvertently altering other
bits in the register.
8.25 Flash program memory
8.25.1
General description
The P89LPC906/907/908 Flash memory provides in-circuit electrical erasure and
programming. The Flash can be erased, read, and written as bytes. The Sector and
Page Erase functions can erase any Flash sector (256 bytes) or page (16 bytes). The
Chip Erase operation will erase the entire program memory. In-Circuit Programming
using standard commercial programmers is available. In addition, In-Application
Programming (IAP) and byte erase allows code memory to be used for non-volatile
data storage. On-chip erase and write timing generation contribute to a user-friendly
programming interface. The P89LPC906/907/908 Flash reliably stores memory
contents even after 100,000 erase and program cycles. The cell is designed to
optimize the erase and programming mechanisms. The P89LPC906/907/908 uses
VDD as the supply voltage to perform the Program/Erase algorithms.
8.25.2
Features
Programming and erase over the full operating voltage range.
Byte-erase allowing code memory to be used for data storage.
Read/Programming/Erase using ICP.
Any ash program/erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the Flash for each sector.
More than 100,000 erase/program cycles for each byte.
10-year minimum data retention.
8.25.3
Flash organization
The P89LPC906/907/908 program memory consists of four 256 byte sectors. Each
sector can be further divided into 16-byte pages. In addition to sector erase, page
erase, and byte erase, a 16-byte page register is included which allows from 1 to 16
bytes of a given page to be programmed at the same time, substantially reducing
overall programming time. In addition, erasing and reprogramming of
user-programmable conguration bytes including UCFG1, the Boot Status Bit, and
the Boot Vector is supported.
8.25.4
Flash programming and erasing
Different methods of erasing or programming of the Flash are available. The Flash
may be programmed or erased in the end-user application (IAP-Lite) under control of
the application’s rmware. Another option is to use the In-Circuit Programming (ICP)
mechanism. This ICP system provides for programming through a serial clock- serial
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