参数资料
型号: PC28F128J3C-120
厂商: INTEL CORP
元件分类: PROM
英文描述: Intel StrataFlash Memory (J3)
中文描述: 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
封装: LEAD FREE, BGA-64
文件页数: 51/72页
文件大小: 905K
代理商: PC28F128J3C-120
256-Mbit J3 (x8/x16)
Datasheet
51
10 = pulse on Program Complete
Used to generate a system interrupt pulse when any flash device in
an array has completed a program operation. Provides highest
performance for servicing continuous buffer write operations.
11 = pulse on Erase or Program
Complete
Used to generate system interrupts to trigger servicing of flash arrays
when either erase or program operations are completed, when a
common interrupt service routine is desired.
NOTES:
1. When configured in one of the pulse modes, STS pulses low with a typical pulse width of 250 ns.
2. An invalid configuration code will result in both SR.4 and SR.5 being set.
Table 22. STS Configuration Coding Definitions
D7
D6
D5
D4
D3
D2
D1
D0
Reserved
Pulse on
Program
Complete
(1)
Pulse on
Erase
Complete
(1)
D[1:0]
= STS Configuration Codes
Notes
相关PDF资料
PDF描述
PC28F128J3C-125 Intel StrataFlash Memory (J3)
PC28F128J3C-150 Intel StrataFlash Memory (J3)
PC28F256J3A-125 Intel StrataFlash Memory (J3)
PC28F256J3A-150 Intel StrataFlash Memory (J3)
PC28F256J3C-120 Intel StrataFlash Memory (J3)
相关代理商/技术参数
参数描述
PC28F128J3C-125 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
PC28F128J3C-150 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
PC28F128J3D-75 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:Numonyx? Embedded Flash Memory (J3 v. D)
PC28F128J3D75A 功能描述:IC FLASH 128MBIT 75NS 64EZBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
PC28F128J3D75B 功能描述:IC FLASH 128MBIT 75NS 64EZBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ